参数资料
型号: MC56F8245MLD
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 微控制器/微处理器
英文描述: 16-BIT, FLASH, 60 MHz, MICROCONTROLLER, PQFP44
封装: 10 X 10 MM, 1.40 MM HEIGHT, 0.80 MM PITCH, ROHS COMPLIANT, PLASTIC, MS-026BCB, LQFP-44
文件页数: 48/88页
文件大小: 4050K
代理商: MC56F8245MLD
MC56F825x/MC56F824x Digital Signal Controller, Rev. 3
Specifications
Freescale Semiconductor
52
Junction temperature is a function of die size, on-chip power dissipation, package thermal
resistance, mounting site (board) temperature, ambient temperature, air flow, power
dissipation of other components on the board, and board thermal resistance.
See Section 8.1, “Thermal Design Considerations,” for more detail on thermal design
considerations.
7.5
Recommended Operating Conditions
This section contains information about recommended operating conditions.
Table 22.
Recommended Operating Conditions (VREFLx = 0 V, VSSA = 0 V, VSS = 0 V)
Characteristic
Symbol
Notes
Min
Typ
Max
Unit
Supply voltage
VDD,
VDDA
33.3
3.6
V
ADC Reference Voltage High
VREFHx
3.0
VDDA
V
Voltage difference VDD to VDDA
ΔVDD
-0.1
0
0.1
V
Voltage difference VSS to VSSA
ΔVSS
-0.1
0
0.1
V
Device Clock Frequency
Using relaxation oscillator
Using external clock source
FSYSCLK
0.001
0
60
MHz
Input Voltage High (digital inputs)
VIH
Pin Groups 1, 2
2.0
5.5
V
Input Voltage Low (digital inputs)
VIL
Pin Groups 1, 2
-0.3
0.8
V
Oscillator Input Voltage High
XTAL driven by an external clock source
VIHOSC
Pin Group 4
2.0
VDD + 0.3
V
Oscillator Input Voltage Low
VILOSC
Pin Group 4
-0.3
0.8
V
DAC Output Load Resistance
RLD
Pin Group 5
3K
Ω
DAC Output Load Capacitance
CLD
Pin Group 5
400
pf
Output Source Current High at VOH min.)1
When programmed for low drive strength
When programmed for high drive strength
IOH
Pin Group 1
-4
-8
mA
Output Source Current Low (at VOL max.)1
When programmed for low drive strength
When programmed for high drive strength
IOL
Pin Groups 1, 2
4
8
mA
Ambient Operating Temperature
(Extended Industrial)
TA
-40
105
°C
Flash Endurance
(Program Erase Cycles)
NF
TA = -40°C to
125°C
10,000
cycles
Flash Data Retention
TR
TJ <= 85°C avg
15
years
Flash Data Retention with <100
Program/Erase Cycles
tFLRET
TJ <= 85°C avg
20
years
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