参数资料
型号: MC74HC367ADTR2G
厂商: ON Semiconductor
文件页数: 2/7页
文件大小: 0K
描述: IC BUFFER 3ST HEX 16-TSSOP
标准包装: 2,500
系列: 74HC
逻辑类型: 缓冲器/线路驱动器,非反相
元件数: 2
每个元件的位元数: 2,4(六路)
输出电流高,低: 7.8mA,7.8mA
电源电压: 2 V ~ 6 V
工作温度: -55°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 16-TSSOP(0.173",4.40mm 宽)
供应商设备封装: 16-TSSOP
包装: 带卷 (TR)
MC74HC367A
http://onsemi.com
2
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage (Referenced to GND)
0.5 to +7.0
V
Vin
DC Input Voltage (Referenced to GND)
0.5 to VCC + 0.5
V
Vout
DC Output Voltage (Referenced to GND)
0.5 to VCC + 0.5
V
Iin
DC Input Current, per Pin
±20
mA
Iout
DC Output Current, per Pin
±25
mA
ICC
DC Supply Current, VCC and GND Pins
±50
mA
PD
Power Dissipation in Still Air,
SOIC Package
TSSOP Package
500
450
mW
Tstg
Storage Temperature
65 to + 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress
ratings only. Functional operation above the Recommended Operating Conditions is not implied.
Extended exposure to stresses above the Recommended Operating Conditions may affect device
reliability.
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage (Referenced to GND)
2.0
6.0
V
Vin, Vout
DC Input Voltage, Output Voltage (Referenced to GND)
0
VCC
V
TA
Operating Temperature, All Package Types
55
+125
°C
tr, tf
Input Rise and Fall Time
VCC = 2.0 V
(Figure 2)
VCC = 3.0 V
VCC = 4.5 V
VCC = 6.0 V
0
1000
600
500
400
ns
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highimpedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
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