参数资料
| 型号： | MC74HCT374AN |
| 厂商： | ON Semiconductor |
| 文件页数： | 3/8页 |
| 文件大小： | 0K |
| 描述： | IC FLIP FLOP OCT D 3ST 20-DIP |
| 产品变化通告： | LTB Notification 03/Jan/2008 |
| 标准包装： | 18 |
| 系列： | 74HCT |
| 功能： | 标准 |
| 类型： | D 型总线 |
| 输出类型： | 三态非反相 |
| 元件数： | 1 |
| 每个元件的位元数： | 8 |
| 频率 - 时钟： | 30MHz |
| 延迟时间 - 传输： | 31ns |
| 触发器类型： | 正边沿 |
| 输出电流高，低： | 6mA，6mA |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -55°C ~ 125°C |
| 安装类型： | 通孔 |
| 封装/外壳： | 20-DIP（0.300"，7.62mm） |
| 包装： | 管件 |
MC74HCT374A
http://onsemi.com
3
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC
DC Supply Voltage (Referenced to GND)
– 0.5 to + 7.0
V
Vin
DC Input Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Vout
DC Output Voltage (Referenced to GND)
– 0.5 to VCC + 0.5
V
Iin
DC Input Current, per Pin
± 20
mA
Iout
DC Output Current, per Pin
± 35
mA
ICC
DC Supply Current, VCC and GND Pins
± 75
mA
PD
Power Dissipation in Still Air,
Plastic DIP
SOIC Package
TSSOP Package
750
500
450
mW
Tstg
Storage Temperature
– 65 to + 150
_C
TL
Lead Temperature, 1 mm from Case for 10 Seconds
(Plastic DIP, SOIC, SSOP or TSSOP Package)
260
_C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings
applied to the device are individual stress limit values (not normal operating conditions) and are
not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C
SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: 6.1 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
VCC
DC Supply Voltage (Referenced to GND)
4.5
5.5
V
Vin, Vout
DC Input Voltage, Output Voltage (Referenced to GND)
0
VCC
V
TA
Operating Temperature, All Package Types
– 55
+ 125
_C
tr, tf
Input Rise and Fall Time (Figure 1)
0
500
ns
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)
Symbol
Parameter
Test Conditions
VCC
V
Guaranteed Limit
Unit
– 55 to
25_C
v 85_C
v 125_C
VIH
Minimum HighLevel Input Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 mA
4.5
5.5
2.0
2.0
2.0
2.0
V
VIL
Maximum LowLevel Input Voltage
Vout = 0.1 V or VCC – 0.1 V
|Iout| v 20 mA
4.5
5.5
0.8
0.8
0.8
V
VOH
Minimum HighLevel Output Voltage
Vin = VIH or VIL
|Iout| v 20 mA
4.5
5.5
4.4
5.4
4.4
5.4
4.4
5.4
V
Vin = VIH or VIL
|Iout| v 6.0 mA
4.5
3.98
3.84
3.7
VOL
Maximum LowLevel Output Voltage
Vin = VIH or VIL
|Iout| v 20 mA
4.5
5.5
0.1
0.1
0.1
V
Vin = VIH or VIL
|Iout| v 6.0 mA
4.5
0.26
0.33
0.4
Iin
Maximum Input Leakage Current
Vin = VCC or GND
5.5
± 0.1
± 1.0
± 1.0
mA
IOZ
Maximum ThreeState Leakage
Current
Output in HighImpedance State
Vin = VIL or VIH
Vout = VCC or GND
5.5
± 0.5
± 5.0
± 10
mA
ICC
Maximum Quiescent Supply Current
(per Package)
Vin = VCC or GND
Iout = 0 mA
5.5
4.0
40
160
mA
DICC
Additional Quiescent Supply Current
Vin = 2.4 V, Any One Input
Vin = VCC or GND, Other Inputs
lout = 0 mA
5.5
≥ 55_C
25_C to 125_C
mA
2.9
2.4
1. Total Supply Current = ICC + ΣDICC.
This device contains protection
circuitry to guard against damage
due to high static voltages or electric
fields. However, precautions must
be taken to avoid applications of any
voltage higher than maximum rated
voltages to this highimpedance cir-
cuit. For proper operation, Vin and
Vout should be constrained to the
range GND v (Vin or Vout) v VCC.
Unused inputs must always be
tied to an appropriate logic voltage
level (e.g., either GND or VCC).
Unused outputs must be left open.
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