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参数资料
| 型号： | MC74VHC1G135DTT3 |
| 厂商： | ON SEMICONDUCTOR |
| 元件分类： | 门电路 |
| 英文描述： | AHC/VHC SERIES, 2-INPUT NAND GATE, PDSO5 |
| 封装： | SC-59, SOT-23, TSOP-5 |
| 文件页数： | 5/12页 |
| 文件大小： | 129K |
| 代理商： | MC74VHC1G135DTT3 |
MC74VHC1G135
http://onsemi.com
2
MAXIMUM RATINGS (Note 1.)
Symbol
Characteristics
Value
Unit
VCC
DC Supply Voltage
–0.5 to +7.0
V
VIN
DC Input Voltage
–0.5 to +7.0
V
VOUT
DC Output Voltage
–0.5 to 7.0
V
IIK
Input Diode Current
–20
mA
IOK
Output Diode Current
VOUT < GND; VOUT > VCC
+20
mA
IOUT
DC Output Current, per Pin
+25
mA
ICC
DC Supply Current, VCC and GND
+50
mA
PD
Power dissipation in still air
SC–88A, TSOP–5
200
mW
qJA
Thermal resistance
SC–88A, TSOP–5
333
_C/W
TL
Lead temperature, 1 mm from case for 10 s
260
°C
TJ
Junction temperature under bias
+150
°C
Tstg
Storage temperature
–65 to +150
°C
VESD
ESD Withstand Voltage
Human Body Model (Note 2.)
Machine Model (Note 3.)
Charged Device Model (Note 4.)
> 2000
> 200
N/A
V
ILatch–Up
Latch–Up Performance
Above VCC and Below GND at 125°C (Note 5.)
±500
mA
1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those
indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. Functional
operation should be restricted to the Recommended Operating Conditions.
2. Tested to EIA/JESD22–A114–A
3. Tested to EIA/JESD22–A115–A
4. Tested to JESD22–C101–A
5. Tested to EIA/JESD78
RECOMMENDED OPERATING CONDITIONS
Symbol
Characteristics
Min
Max
Unit
VCC
DC Supply Voltage
2.0
5.5
V
VIN
DC Input Voltage
0.0
5.5
V
VOUT
DC Output Voltage
0.0
7.0
V
TA
Operating Temperature Range
–55
+125
°C
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature
°C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
10
100
1000
TIME, YEARS
NORMALIZED
F
AILURE
RA
TE
T J
=80
C°
T J
=90
C°
T J
=100
C°
T J
=1
10
C°
T J
=130
C°
T J
=120
C°
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time
Junction Temperature
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| MC74VHC1G14DFT1 | 功能描述:变换器 2-5.5V CMOS Single RoHS:否 制造商:NXP Semiconductors 电路数量:6 逻辑系列:74ABT 逻辑类型:BiCMOS 高电平输出电流:- 15 mA 低电平输出电流:20 mA 传播延迟时间:2.2 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 工作温度范围: 封装 / 箱体:DIP-14 封装:Tube |
| MC74VHC1G14DFT1G | 功能描述:变换器 2-5.5V CMOS Single Schmitt Input RoHS:否 制造商:NXP Semiconductors 电路数量:6 逻辑系列:74ABT 逻辑类型:BiCMOS 高电平输出电流:- 15 mA 低电平输出电流:20 mA 传播延迟时间:2.2 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 工作温度范围: 封装 / 箱体:DIP-14 封装:Tube |
| MC74VHC1G14DFT2 | 功能描述:变换器 2-5.5V CMOS Single RoHS:否 制造商:NXP Semiconductors 电路数量:6 逻辑系列:74ABT 逻辑类型:BiCMOS 高电平输出电流:- 15 mA 低电平输出电流:20 mA 传播延迟时间:2.2 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 工作温度范围: 封装 / 箱体:DIP-14 封装:Tube |
| MC74VHC1G14DFT2G | 功能描述:变换器 2-5.5V CMOS Single Schmitt Input RoHS:否 制造商:NXP Semiconductors 电路数量:6 逻辑系列:74ABT 逻辑类型:BiCMOS 高电平输出电流:- 15 mA 低电平输出电流:20 mA 传播延迟时间:2.2 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 工作温度范围: 封装 / 箱体:DIP-14 封装:Tube |
| MC74VHC1G14DTT1 | 功能描述:变换器 2-5.5V CMOS Single RoHS:否 制造商:NXP Semiconductors 电路数量:6 逻辑系列:74ABT 逻辑类型:BiCMOS 高电平输出电流:- 15 mA 低电平输出电流:20 mA 传播延迟时间:2.2 ns 电源电压-最大:5.5 V 电源电压-最小:4.5 V 最大工作温度:+ 85 C 最小工作温度:- 40 C 工作温度范围: 封装 / 箱体:DIP-14 封装:Tube |
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