参数资料
型号: MC9RS08LA8CLF
厂商: Freescale Semiconductor
文件页数: 33/33页
文件大小: 0K
描述: MCU 8BIT 8K FLASH W/LCD 48-LQFP
标准包装: 250
系列: RS08
核心处理器: RS08
芯体尺寸: 8-位
速度: 20MHz
连通性: SCI,SPI
外围设备: LCD,LVD,POR,PWM,WDT
输入/输出数: 31
程序存储器容量: 8KB(8K x 8)
程序存储器类型: 闪存
RAM 容量: 256 x 8
电压 - 电源 (Vcc/Vdd): 2.7 V ~ 5.5 V
数据转换器: A/D 6x10b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 48-LQFP
包装: 托盘
Electrical Characteristics
MC9RS08LA8 Series MCU Data Sheet, Rev. 2
Freescale Semiconductor
9
(if PI/O is neglected) is:
PD = K ÷ (TJ + 273°C)
Eqn. 2
Solving Equation 1 and Equation 2 for K gives:
K = PD × (TA + 273°C) + θJA× (PD)2
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from Equation A-3 by
measuring PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be
obtained by solving equations 1 and 2 iteratively for any value of TA.
3.4
ESD Protection and Latch-Up Immunity
Although damage from electrostatic discharge (ESD) is much less common on these devices than on early
CMOS circuits, normal handling precautions must be used to avoid exposure to static discharge.
Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels
of static without suffering any permanent damage.
All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade
Integrated Circuits. During the device qualification ESD stresses were performed for the human body
model (HBM), the machine model (MM) and the charge device model (CDM).
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device
specification. Complete DC parametric and functional testing is performed per the applicable device
specification at room temperature followed by hot temperature, unless specified otherwise in the device
specification.
Table 5. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Human
Body
Series resistance
R1
1500
Ω
Storage capacitance
C
100
pF
Number of pulses per pin
3
Machine
Series resistance
R1
0
Ω
Storage capacitance
C
200
pF
Number of pulses per pin
3
Latch-up
Minimum input voltage limit
–2.5
V
Maximum input voltage limit
7.5
V
相关PDF资料
PDF描述
VE-J6M-IW-B1 CONVERTER MOD DC/DC 10V 100W
MC9S08RG32FGE IC MCU 32K FLASH 8MHZ 44-LQFP
VE-J6L-IW-B1 CONVERTER MOD DC/DC 28V 100W
VE-J6K-IW-B1 CONVERTER MOD DC/DC 40V 100W
VE-J6J-IW-B1 CONVERTER MOD DC/DC 36V 100W
相关代理商/技术参数
参数描述
MC9RS08LA8CLF 制造商:Freescale Semiconductor 功能描述:8BIT 8K FLASH W/ LCD
MC9RS08LE4 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:MCU Block Diagram
MC9RS08LE4_09 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:MCU Block Diagram
MC9RS08LE4CWL 功能描述:8位微控制器 -MCU 8Bit 4K Flash w/ LCD RoHS:否 制造商:Silicon Labs 核心:8051 处理器系列:C8051F39x 数据总线宽度:8 bit 最大时钟频率:50 MHz 程序存储器大小:16 KB 数据 RAM 大小:1 KB 片上 ADC:Yes 工作电源电压:1.8 V to 3.6 V 工作温度范围:- 40 C to + 105 C 封装 / 箱体:QFN-20 安装风格:SMD/SMT
MC9RS08LE4WL 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:MCU Block Diagram