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参数资料
| 型号： | MC9S08MM64VLH |
| 厂商： | Freescale Semiconductor |
| 文件页数： | 8/52页 |
| 文件大小： | 0K |
| 描述： | IC MCU 8BIT 32K FLASH 64LQFP |
| 标准包装： | 160 |
| 系列： | S08 |
| 核心处理器： | S08 |
| 芯体尺寸： | 8-位 |
| 速度： | 48MHz |
| 连通性： | I²C，SCI，SPI，USB |
| 外围设备： | LVD，POR，PWM，WDT |
| 输入/输出数： | 33 |
| 程序存储器容量： | 64KB（64K x 8） |
| 程序存储器类型： | 闪存 |
| RAM 容量： | 12K x 8 |
| 电压 - 电源 (Vcc/Vdd)： | 1.8 V ~ 3.6 V |
| 数据转换器： | A/D 6x16b，D/A 1x12b |
| 振荡器型： | 内部 |
| 工作温度： | -40°C ~ 105°C |
| 封装/外壳： | 64-LQFP |
| 包装： | 托盘 |
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Electrical Characteristics
Freescale Semiconductor
16
For most applications, PI/O Pint and can be neglected. An approximate relationship between PD and TJ (if PI/O is neglected)
is:
PD = K (TJ + 273C)
Eqn. 2
Solving Equation 1 and Equation 2 for K gives:
K = PD (TA + 273C) + JA (PD)
2
Eqn. 3
where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring PD (at equilibrium)
for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving Equation 1 and Equation 2 iteratively
for any value of TA.
2.4
ESD Protection Characteristics
Although damage from static discharge is much less common on these devices than on early CMOS circuits, normal handling
precautions should be used to avoid exposure to static discharge. Qualification tests are performed to ensure that these devices
can withstand exposure to reasonable levels of static without suffering any permanent damage.
All ESD testing is in conformity with CDF-AEC-Q00 Stress Test Qualification for Automotive Grade Integrated Circuits.
(http://www.aecouncil.com/) This device was qualified to AEC-Q100 Rev E.
A device is considered to have failed if, after exposure to ESD pulses, the device no longer meets the device specification
requirements. Complete dc parametric and functional testing is performed per the applicable device specification at room
temperature followed by hot temperature, unless specified otherwise in the device specification.
Table 7. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Human Body
Series Resistance
R1
1500
Storage Capacitance
C
100
pF
Number of Pulse per pin
—
3
—
Machine
Series Resistance
R1
0
Storage Capacitance
C
200
pF
Number of Pulse per pin
—
3
—
Latch-up
Minimum input voltage limit
—
–2.5
V
Maximum input voltage limit
—
7.5
V
Table 8. ESD and Latch-Up Protection Characteristics
#
Rating
Symbol
Min
Max
Unit
C
1
Human Body Model (HBM)
VHBM
2000
—
V
T
2
Machine Model (MM)
VMM
200
—
V
T
3
Charge Device Model (CDM)
VCDM
500
—
V
T
4
Latch-up Current at TA = 125CILAT
00
—
mA
T
Freescale reserves the right to change the detail specifications as may be required to permit improvements in the design of its products.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MC9S08MM64VLK | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Advanced Information |
| MC9S08MM64VMB | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Advanced Information |
| MC9S08MP12 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:8-Bit HCS08 Central Processor Unit (CPU) |
| MC9S08MP12E2MLC | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:8-Bit HCS08 Central Processor Unit (CPU) |
| MC9S08MP12E2MLF | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:8-Bit HCS08 Central Processor Unit (CPU) |
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