参数资料
型号: MC9S08MP12VWL
厂商: Freescale Semiconductor
文件页数: 14/36页
文件大小: 0K
描述: MCU 8BIT .25U SGF FLASH SOIC
标准包装: 26
系列: S08
核心处理器: S08
芯体尺寸: 8-位
速度: 51.34MHz
连通性: I²C,LIN,SCI,SPI
外围设备: LVD,POR,PWM,WDT
输入/输出数: 22
程序存储器容量: 12KB(12K x 8)
程序存储器类型: 闪存
RAM 容量: 512 x 8
电压 - 电源 (Vcc/Vdd): 2.7 V ~ 5.5 V
数据转换器: A/D 13x12b,D/A 3x5b
振荡器型: 内部
工作温度: -40°C ~ 105°C
封装/外壳: 28-SOIC(0.295",7.50mm 宽)
包装: 管件
Electrical Characteristics
MC9S08MP16 Series Data Sheet, Rev. 2
Freescale Semiconductor
21
2.9
Internal Clock Source (ICS) Characteristics
5T
Crystal start-up time 4
ms
Low range, low gain (RANGE = 0, HGO = 0)
t
CSTL-LP
200
Low range, high gain (RANGE = 0, HGO = 1)
t
CSTL-HGO
400
High range, low gain (RANGE = 1, HGO = 0)5
t
CSTH-LP
—5—
High range, high gain (RANGE = 1, HGO = 1)4
t
CSTH-HGO
—20—
6T
Square wave input clock frequency (EREFS = 0, ERCLKEN = 1)
fextal
FEE mode 2
0.03125
51.34
MHz
FBE mode 3
0—
51.34
MHz
FBELP mode
0
51.34
MHz
1 Typical data was characterized at 5.0 V, 25
C or is recommended value.
2 The input clock source must be divided using RDIV to within the range of 31.25 kHz to 39.0625 kHz.
3 The input clock source must be divided using RDIV to less than or equal to 39.0625 kHz.
4 This parameter is characterized and not tested on each device. Proper PC board layout procedures must be followed to achieve
specifications.
5 4 MHz crystal
Table 10. ICS Frequency Specifications
Num
C
Characteristic
Symbol
Min
Typ1
Max
Unit
1a
P
Average internal reference frequency — factory trimmed
(consumer- and industrial-qualified devices)
at VDD = 5 V and temperature = 25C
fint_t
32.768
kHz
1b
P
Average internal reference frequency — factory trimmed
(automotive-qualified devices)
at VDD = 5 V and temperature = 25C
fint_t
31.25
kHz
2P Internal reference frequency — user trimmed
fint_t
31.25
39.06
kHz
3T Internal reference start-up time
tirefst
60
100
s
Table 9. Oscillator Electrical Specifications (continued)
Num
C
Rating
Symbol
Min
Typ1
Max
Unit
MCU
EXTAL
XTAL
Crystal or Resonator
RS
C2
RF
C1
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