参数资料
型号: MC9S12DJ64CPVE
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: 微控制器/微处理器
英文描述: 16-BIT, FLASH, 25 MHz, MICROCONTROLLER, PQFP112
封装: LQFP-112
文件页数: 4/128页
文件大小: 1835K
代理商: MC9S12DJ64CPVE
MC9S12DJ64 Device User Guide — V01.20
101
A.3 NVM, Flash and EEPROM
NOTE:
Unless otherwise noted the abbreviation NVM (Non Volatile Memory) is used for
both Flash and EEPROM.
A.3.1 NVM timing
The time base for all NVM program or erase operations is derived from the oscillator. A minimum
oscillator frequency fNVMOSC is required for performing program or erase operations. The NVM modules
do not have any means to monitor the frequency and will not prevent program or erase operation at
frequencies above or below the specified minimum. Attempting to program or erase the NVM modules at
a lower frequency a full program or erase transition is not assured.
The Flash and EEPROM program and erase operations are timed using a clock derived from the oscillator
using the FCLKDIV and ECLKDIV registers respectively. The frequency of this clock must be set within
the limits specified as fNVMOP.
The minimum program and erase times shown in Table A-11 are calculated for maximum fNVMOP and
maximum fbus. The maximum times are calculated for minimum fNVMOP and a fbus of 2MHz.
A.3.1.1 Single Word Programming
The programming time for single word programming is dependant on the bus frequency as a well as on
the frequency fNVMOP and can be calculated according to the following formula.
A.3.1.2 Row Programming
This applies only to the Flash where up to 32 words in a row can be programmed consecutively by keeping
the command pipeline filled. The time to program a consecutive word can be calculated as:
The time to program a whole row is:
Row programming is more than 2 times faster than single word programming.
A.3.1.3 Sector Erase
Erasing a 512 byte Flash sector or a 4 byte EEPROM sector takes:
t
swpgm
9
1
f
NVMOP
---------------------
25
1
f
bus
----------
+
=
t
bwpgm
4
1
f
NVMOP
---------------------
9
1
f
bus
----------
+
=
t
brpgm
t
swpgm
31 t
bwpgm
+
=
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