参数资料
型号: MCD224-22IO1
厂商: IXYS
文件页数: 2/5页
文件大小: 0K
描述: MOD THYRISTOR/DIODE 2200V Y1-CU
其它有关文件: SCR Module Selection Guide
标准包装: 3
结构: 串联 - SCR/二极管
SCR 数目,二极管: 1 SCR,1 个二极管
电压 - 断路: 2200V
电流 - 栅极触发电流 (Igt)(最大): 150mA
电流 - 导通状态 (It (AV))(最大): 240A
电流 - 导通状态 (It (RMS))(最大): 400A
电流 - 非重复电涌,50、60Hz (Itsm): 8000A,8500A
电流 - 维持(Ih): 200mA
安装类型: 底座安装
封装/外壳: Y1-CU
包装: 散装
MCC 224
MCD 224
Symbol
Conditions
Characteristic Values
typ.
max.
800
I RRM , I DRM
V T
V R / V D = V RRM / V DRM
I T = 600 A
T VJ = T VJM
T VJ = 25°C
40
1.4
mA
V
600
V T0
r t
V GT
I GT
For power-loss calculations only
V D = 6 V
V D = 6 V
T VJ = T VJM
T VJ = 25°C
T VJ = -40°C
T VJ = 25°C
T VJ = -40°C
0.8
0.76
2
3
150
220
V
m W
V
V
mA
mA
I T / F
[A]
400
200
T VJ = 125°C
V D = / 3 V DRM ;
V GD
I GD
I L
2
t p = 30 μs; V D = 6 V
I G = 0.45 A; di G /dt = 0.45 A/μs
T VJ = T VJM
T VJ = 25°C
0.25
10
200
V
mA
mA
0
0.0
0.4
T VJ = 25°C
0.8 1.2
V T / F [V]
1.6
2.0
I H
V D = 6 V; R GK = ∞ ;
T VJ = 25°C
150
mA
Fig. 1 Forward characteristics
t gd
t q
V D = ?V DRM
I G = 1 A; di G /dt = 1 A/μs
V D = 2 / 3 V DRM
dv/dt = 50 V/μs; -di/dt = 10 A/μs
T VJ = 25°C
T VJ = T VJM
200
2
μs
μs
10
1: I GT , T VJ = 130°C
2: I GT , T VJ = 25°C
3: I GT , T VJ = -40°C
I T = 300 A; V R = 100 V; t p = 200 μs
Q S
I RM
R thJC
I T = 300 A; -di/dt = 50 A/μs
per thyristor; DC current
per module
T VJ = T VJM
760
275
0.139
0.069
μC
A
K/W
K/W
V G
[V]
1
1
2
3
4
5
6
R thJK
d S
d A
a
per thyristor; DC current
per module
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleratio n
0.179
0.089
12.7
9.6
50
K/W
K/W
mm
mm
m/s 2
0.1
10 -3
I GD , T VJ = 130°C
10 -2 10 -1
4: P GM = 20 W
5: P GM = 60 W
6: P GM = 120 W
10 0 10 1 10 2
I G [A]
Fig. 2 Gate trigger characteristics
100
10
t gd
[μs]
1
typ.
limit
T VJ = 25°C
0.1
0.01
0.1
100
I G [A]
1000
10000
Fig. 3 Gate trigger delay time
IXYS reserves the right to change limits, test conditions and dimensions.
? 2013 IXYS All rights reserved
20130813f
2-4
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