参数资料
型号: MCF51JE256VML
厂商: Freescale Semiconductor
文件页数: 10/47页
文件大小: 0K
描述: IC MCU 256K COLDF 104-PBGA
标准包装: 240
系列: MCF51JE
核心处理器: Coldfire V1
芯体尺寸: 32-位
速度: 50MHz
连通性: CAN,EBI/EMI,I²C,SCI,SPI,USB OTG
外围设备: LVD,PWM,WDT
输入/输出数: 69
程序存储器容量: 256KB(256K x 8)
程序存储器类型: 闪存
RAM 容量: 32K x 8
电压 - 电源 (Vcc/Vdd): 1.8 V ~ 3.6 V
数据转换器: A/D 12x12b,D/A 1x12b
振荡器型: 外部
工作温度: -40°C ~ 105°C
封装/外壳: 104-LFBGA
包装: 管件
MCF51JE256 Datasheet, Rev. 4
Preliminary Electrical Characteristics
Freescale Semiconductor
18
where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring
PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by
solving Equation 1 and Equation 2 iteratively for any value of TA.
3.4
ESD Protection Characteristics
Although damage from static discharge is much less common on these devices than on early CMOS
circuits, normal handling precautions should be used to avoid exposure to static discharge. Qualification
tests are performed to ensure that these devices can withstand exposure to reasonable levels of static
without suffering any permanent damage.
All ESD testing is in conformity with CDF-AEC-Q00 Stress Test Qualification for Automotive Grade
Integrated Circuits. (http://www.aecouncil.com/) This device was qualified to AEC-Q100 Rev E.
A device is considered to have failed if, after exposure to ESD pulses, the device no longer meets the
device specification requirements. Complete dc parametric and functional testing is performed per the
applicable device specification at room temperature followed by hot temperature, unless specified
otherwise in the device specification.
3.5
DC Characteristics
This section includes information about power supply requirements, I/O pin characteristics, and power
supply current in various operating modes.
Table 7. ESD and Latch-up Test Conditions
Model
Description
Symbol
Value
Unit
Human Body
Series Resistance
R1
1500
Storage Capacitance
C
100
pF
Number of Pulse per pin
3
Machine
Series Resistance
R1
0
Storage Capacitance
C
200
pF
Number of Pulse per pin
3
Latch-up
Minimum input voltage limit
–2.5
V
Maximum input voltage limit
7.5
V
Table 8. ESD and Latch-Up Protection Characteristics
#
Rating
Symbol
Minimum
Maximum
Unit
C
1
Human Body Model (HBM)
VHBM
2000
V
T
2
Machine Model (MM)
VMM
200
V
T
3
Charge Device Model (CDM)
VCDM
500
V
T
4
Latch-up Current at TA = 125CILAT
00
mA
T
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