- 您现在的位置：买卖IC网 > PDF目录80366 > MCF51QF128VHS (FREESCALE SEMICONDUCTOR INC) FLASH, 50 MHz, MICROCONTROLLER, QCC44 PDF资料下载
参数资料
| 型号： | MCF51QF128VHS |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | FLASH, 50 MHz, MICROCONTROLLER, QCC44 |
| 封装： | 5 X 5 MM, QFN-44 |
| 文件页数： | 21/72页 |
| 文件大小： | 1031K |
| 代理商： | MCF51QF128VHS |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页第16页第17页第18页第19页第20页当前第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页第42页第43页第44页第45页第46页第47页第48页第49页第50页第51页第52页第53页第54页第55页第56页第57页第58页第59页第60页第61页第62页第63页第64页第65页第66页第67页第68页第69页第70页第71页第72页
1. Assumes 25MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash (FTFL) current and power specfications
Table 19. Flash (FTFL) current and power specfications
Symbol
Description
Typ.
Unit
IDD_PGM
Worst case programming current in program flash
10
mA
6.4.1.4 Reliability specifications
Table 20. NVM reliability specifications
Symbol
Description
Min.
Typ.1
Max.
Unit
Notes
Program Flash
tnvmretp10k Data retention after up to 10 K cycles
5
TBD
—
years
tnvmretp1k Data retention after up to 1 K cycles
10
TBD
—
years
tnvmretp100 Data retention after up to 100 cycles
15
TBD
—
years
nnvmcycp
Cycling endurance
10 K
TBD
—
cycles
Data Flash
tnvmretd10k Data retention after up to 10 K cycles
5
TBD
—
years
tnvmretd1k Data retention after up to 1 K cycles
10
TBD
—
years
tnvmretd100 Data retention after up to 100 cycles
15
TBD
—
years
nnvmcycd
Cycling endurance
10 K
TBD
—
cycles
FlexRAM as EEPROM
tnvmretee100 Data retention up to 100% of write endurance
5
TBD
—
years
tnvmretee10 Data retention up to 10% of write endurance
10
TBD
—
years
tnvmretee1 Data retention up to 1% of write endurance
15
TBD
—
years
nnvmwree16
nnvmwree128
nnvmwree512
nnvmwree4k
nnvmwree8k
Write endurance
EEPROM backup to FlexRAM ratio = 16
EEPROM backup to FlexRAM ratio = 128
EEPROM backup to FlexRAM ratio = 512
EEPROM backup to FlexRAM ratio = 4096
EEPROM backup to FlexRAM ratio = 8192
35 K
315 K
1.27 M
10 M
20 M
TBD
—
writes
1. Typical data retention values are based on intrinsic capability of the technology measured at high temperature derated to
25°C. For additional information on how Freescale defines typical data retention, please refer to Engineering Bulletin
EB618.
2. Data retention is based on Tjavg = 55°C (temperature profile over the lifetime of the application).
3. Cycling endurance represents number of program/erase cycles at -40°C ≤ Tj ≤ 125°C.
Memories and memory interfaces
MCF51JF128 Advance Information Data Sheet, Rev. 3, 08/2011.
28
Preliminary
Freescale Semiconductor, Inc.
相关PDF资料 |
PDF描述 |
|---|---|
| MPC5602F0MLH4R | 32-BIT, FLASH, 64 MHz, RISC MICROCONTROLLER, PQFP64 |
| MB95F563KPF-G-JNE2 | 8-BIT, FLASH, 16.25 MHz, MICROCONTROLLER, PDSO20 |
| MB95F582KWQN-G-JNE1 | 8-BIT, FLASH, 16.25 MHz, MICROCONTROLLER, PQCC32 |
| MB9AF104RAPMC | 32-BIT, FLASH, 40 MHz, RISC MICROCONTROLLER, PQFP120 |
| MB95F282HWQN | 8-BIT, FLASH, MICROCONTROLLER, PQCC32 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MCF51QH128 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Advance Information Temperature range (ambient): -40°C to 105°C |
| MCF51QH128VHS | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Advance Information Temperature range (ambient): -40°C to 105°C |
| MCF51QH128VHX | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Advance Information Temperature range (ambient): -40°C to 105°C |
| MCF51QH32VFM | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Advance Information Temperature range (ambient): -40°C to 105°C |
| MCF51QH32VHS | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Advance Information Temperature range (ambient): -40°C to 105°C |
发布紧急采购，3分钟左右您将得到回复。