参数资料
型号: MCF5212LCVM80J
厂商: Freescale Semiconductor
文件页数: 24/56页
文件大小: 0K
描述: IC MCU 256K FLASH 80MHZ 81MAPBGA
标准包装: 240
系列: MCF521x
核心处理器: Coldfire V2
芯体尺寸: 32-位
速度: 80MHz
连通性: I²C,SPI,UART/USART
外围设备: DMA,LVD,POR,PWM,WDT
输入/输出数: 56
程序存储器容量: 256KB(256K x 8)
程序存储器类型: 闪存
RAM 容量: 32K x 8
电压 - 电源 (Vcc/Vdd): 3 V ~ 3.6 V
数据转换器: A/D 8x12b
振荡器型: 内部
工作温度: -40°C ~ 85°C
封装/外壳: 81-LBGA
包装: 托盘
MCF5213 ColdFire Microcontroller, Rev. 3
Electrical Characteristics
Freescale Semiconductor
30
2.4
Flash Memory Characteristics
The flash memory characteristics are shown in Table 23 and Table 24.
The average chip-junction temperature (TJ) in °C can be obtained from:
(1)
Where:
TA
= ambient temperature,
°C
Θ
JA
= package thermal resistance, junction-to-ambient,
°C/W
PD
= PINT + PI/O
PINT
= chip internal power, IDD × VDD, watts
PI/O
= power dissipation on input and output pins — user determined, watts
For most applications PI/O < PINT and can be ignored. An approximate relationship between PD and TJ (if PI/O is neglected) is:
(2)
Solving equations 1 and 2 for K gives:
K = PD × (TA + 273 °C) + ΘJMA × PD
2 (3)
where K is a constant pertaining to the particular part. K can be determined from equation (3) by measuring PD (at equilibrium)
for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving equations (1) and (2) iteratively for
any value of TA.
Table 23. SGFM Flash Program and Erase Characteristics
(VDDF = 2.7 to 3.6 V)
Parameter
Symbol
Min
Typ
Max
Unit
System clock (read only)
fsys(R)
0—
66.67 or 801
1
Depending on packaging; see Table 2.
MHz
System clock (program/erase)2
2
Refer to the flash memory section for more information
fsys(P/E)
0.15
66.67 or 801
MHz
Table 24. SGFM Flash Module Life Characteristics
(VDDF = 2.7 to 3.6 V)
Parameter
Symbol
Value
Unit
Maximum number of guaranteed program/erase cycles1 before failure
1 A program/erase cycle is defined as switching the bits from 1
→ 0 → 1.
P/E
10,0002
2 Reprogramming of a flash memory array block prior to erase is not required.
Cycles
Data retention at average operating temperature of 85
°C
Retention
10
Years
T
J
T
A
P
D
Θ
JMA
×
()
+
=
P
D
KT
J
273
°C
+
()
÷
=
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