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| 型号： | MCF5274VM133 |
| 厂商： | FREESCALE SEMICONDUCTOR INC |
| 元件分类： | 微控制器/微处理器 |
| 英文描述： | 32-BIT, 133 MHz, RISC PROCESSOR, PBGA256 |
| 封装： | MAPBGA-256 |
| 文件页数： | 13/44页 |
| 文件大小： | 1242K |
| 代理商： | MCF5274VM133 |
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MCF5275 Integrated Microprocessor Family Hardware Specification, Rev. 2
Preliminary—Subject to Change Without Notice
Preliminary Electrical Characteristics
Freescale Semiconductor
20
8.3
ESD Protection
5
Thermal characterization parameter indicating the temperature difference between package top and the junction
temperature per JEDEC JESD51-2. When Greek letters are not available, the thermal characterization parameter is written
in conformance with Psi-JT.
The average chip-junction temperature (TJ) in °C can be obtained from:
(1)
Where:
TA
= Ambient Temperature,
°C
Θ
JMA
= Package Thermal Resistance, Junction-to-Ambient,
°C/W
PD
= PINT + PI/O
PINT
= IDD × VDD, Watts - Chip Internal Power
PI/O
= Power Dissipation on Input and Output Pins — User Determined
For most applications PI/O < PINT and can be ignored. An approximate relationship between PD and TJ (if PI/O is
neglected) is:
(2)
Solving equations 1 and 2 for K gives:
K = PD × (TA + 273 °C) + ΘJMA × PD
2 (3)
where K is a constant pertaining to the particular part. K can be determined from equation (3) by measuring PD (at
equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving equations (1)
and (2) iteratively for any value of TA.
Table 9. ESD Protection Characteristics1, 2
1
All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for Automotive
Grade Integrated Circuits.
2
A device is defined as a failure if after exposure to ESD pulses the device no longer meets the
device specification requirements. Complete DC parametric and functional testing is
performed per applicable device specification at room temperature followed by hot
temperature, unless specified otherwise in the device specification.
Characteristics
Symbol
Value
Units
ESD Target for Human Body Model
HBM
2000
V
ESD Target for Machine Model
MM
200
V
HBM Circuit Description
Rseries
1500
C
100
pF
MM Circuit Description
Rseries
0
C
200
pF
Number of pulses per pin (HBM)
positive pulses
negative pulses
—
1
—
Number of pulses per pin (MM)
positive pulses
negative pulses
—
3
—
Interval of Pulses
—
1
sec
TJ
TA
PD ΘJMA
×
(
)
+
=
PD
KTJ 273°C
+
()
÷
=
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCF5274VM166 | 功能描述:微处理器 - MPU MCF5274 V2CORE 64KSRAM RoHS:否 制造商:Atmel 处理器系列:SAMA5D31 核心:ARM Cortex A5 数据总线宽度:32 bit 最大时钟频率:536 MHz 程序存储器大小:32 KB 数据 RAM 大小:128 KB 接口类型:CAN, Ethernet, LIN, SPI,TWI, UART, USB 工作电源电压:1.8 V to 3.3 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:FBGA-324 |
| MCF5274VM166J | 制造商:Freescale Semiconductor 功能描述:MCF5274 V2CORE 64KSRAM - Bulk |
| MCF5275 | 制造商:FREESCALE 制造商全称:Freescale Semiconductor, Inc 功能描述:Integrated Microprocessor Family Hardware Specification |
| MCF5275CVM133 | 功能描述:IC MCU 32BIT 133MHZ 256-MAPBGA RoHS:否 类别:集成电路 (IC) >> 嵌入式 - 微控制器， 系列:MCF527x 标准包装:250 系列:56F8xxx 核心处理器:56800E 芯体尺寸:16-位 速度:60MHz 连通性:CAN，SCI，SPI 外围设备:POR，PWM，温度传感器，WDT 输入/输出数:21 程序存储器容量:40KB（20K x 16） 程序存储器类型:闪存 EEPROM 大小:- RAM 容量:6K x 16 电压 - 电源 (Vcc/Vdd):2.25 V ~ 3.6 V 数据转换器:A/D 6x12b 振荡器型:内部 工作温度:-40°C ~ 125°C 封装/外壳:48-LQFP 包装:托盘 配用:MC56F8323EVME-ND - BOARD EVALUATION MC56F8323 |
| MCF5275CVM166 | 功能描述:微处理器 - MPU MCF5275 V2CORE 64KSRAM RoHS:否 制造商:Atmel 处理器系列:SAMA5D31 核心:ARM Cortex A5 数据总线宽度:32 bit 最大时钟频率:536 MHz 程序存储器大小:32 KB 数据 RAM 大小:128 KB 接口类型:CAN, Ethernet, LIN, SPI,TWI, UART, USB 工作电源电压:1.8 V to 3.3 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:FBGA-324 |
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