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| 型号： | MCH3475-TL-E |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/6页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 30V 1.8A MCPH3 |
| 产品目录绘图： | MCPH3 Package P-Channel & N-Channel Top |
| 标准包装： | 1 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 30V |
| 电流 - 连续漏极(Id) @ 25° C： | 1.8A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 180 毫欧 @ 900mA，10V |
| 闸电荷(Qg) @ Vgs： | 2nC @ 10V |
| 输入电容 (Ciss) @ Vds： | 88pF @ 10V |
| 功率 - 最大： | 800mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 3-SMD，扁平引线 |
| 供应商设备封装： | 3-MCPH |
| 包装： | 标准包装 |
| 其它名称： | 869-1172-6 |
Ordering number : ENA1000B
MCH3475
N-Channel Power MOSFET
30V, 1.8A, 180m Ω , Single MCPH3
Features
http://onsemi.com
?
?
Ultrahigh speed switching
4V drive
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
30
±20
1.8
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
IDP
PD
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm)
7.2
0.8
150
--55 to +150
A
W
°C
°C
This product is designed to “ESD immunity < 200V * ”, so please take care when handling.
* Machine Model
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7019A-003
Product & Package Information
? Package : MCPH3
? JEITA, JEDEC : SC-70, SOT-323
? Minimum Packing Quantity : 3,000 pcs./reel
2.0
3
0.15
MCH3475-TL-E
0 to 0.02
Packing Type : TL
Marking
FG
TL
1
2
0.65
0.3
1 : Gate
2 : Source
3 : Drain
Electrical Connection
3
1
MCPH3
2
Semiconductor Components Industries, LLC, 2013
August, 2013
80713 TKIM TC-00002983/60612TKIM/D1207PE TIIM TC-00001029 No. A1000-1/6
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相关代理商/技术参数 |
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| MCH3476 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH3476-TL-H | 功能描述:MOSFET NCH 1.8V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MCH3477 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| MCH3477_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH3477-TL-E | 功能描述:MOSFET N-CH 20V 4.5A MCPH3 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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