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参数资料
| 型号： | MCH3481-TL-H |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 2A 20V MCPH3 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 104 毫欧 @ 1A，4.5V |
| 闸电荷(Qg) @ Vgs： | 2.9nc @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 175pF @ 10V |
| 功率 - 最大： | 800mW |
| 安装类型： | * |
| 封装/外壳： | * |
| 供应商设备封装： | * |
| 包装： | * |
Ordering number : ENA1767
MCH3481
N-Channel Power MOSFET
20V, 2A, 104m Ω , Single MCPH3
Features
http://onsemi.com
?
?
ON-resistance RDS(on)1=80m Ω (typ.)
Halogen free compliance
?
?
1.2V drive
Protection diode in
Speci ? cations
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Symbol
VDSS
VGSS
ID
Conditions
Ratings
20
±9
2
Unit
V
V
A
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
IDP
PD
Tch
Tstg
PW ≤ 10 μ s, duty cycle ≤ 1%
When mounted on ceramic substrate (900mm 2 × 0.8mm)
8
0.8
150
--55 to +150
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7019A-003
Product & Package Information
? Package : MCPH3
? JEITA, JEDEC : SC-70, SOT-323
? Minimum Packing Quantity : 3,000 pcs./reel
2.0
3
0.15
MCH3481-TL-H
0 to 0.02
Packing Type : TL
Marking
FN
TL
1
2
0.65
0.3
1 : Gate
2 : Source
3 : Drain
Electrical Connection
3
1
MCPH3
2
Semiconductor Components Industries, LLC, 2013
July, 2013
61312TKIM TC-00002669 No. A1767-1/7
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