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参数资料
| 型号： | MCH3481-TL-H |
| 厂商： | ON Semiconductor |
| 文件页数： | 7/7页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 2A 20V MCPH3 |
| 标准包装： | 3,000 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 2A |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 104 毫欧 @ 1A，4.5V |
| 闸电荷(Qg) @ Vgs： | 2.9nc @ 4.5V |
| 输入电容 (Ciss) @ Vds： | 175pF @ 10V |
| 功率 - 最大： | 800mW |
| 安装类型： | * |
| 封装/外壳： | * |
| 供应商设备封装： | * |
| 包装： | * |
MCH3481
Note on usage : Since the MCH3481 is a MOSFET product, please avoid using this device in the vicinity of
highly charged objects.
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damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
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PS No. A1767-7/7
相关PDF资料 |
PDF描述 |
|---|---|
| MCH3484-TL-H | MOSFET N-CH 4.5A 20V MCPH3 |
| MCH6321-TL-E | MOSFET P-CH 20V 4A MCPH6 |
| MCH6331-TL-E | MOSFET P-CH 30V 3.5A MCPH6 |
| MCH6336-TL-H | MOSFET P-CH 12V 5A MCPH6 |
| MCH6337-TL-H | MOSFET P-CH 20V 4.5A MCPH6 |
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| MCH3484-TL-H | 功能描述:MOSFET NCH 0.9V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MCH3486-TL-H | 制造商:ON Semiconductor 功能描述:NCH 4V DRIVE SERIES - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / NCH 4V DRIVE SERIES |
| MCH38FK102J | 功能描述:云母电容器 1000pF 2500V RoHS:否 电容:100 pF 容差:5 % 电压额定值:300 V 工作温度范围:- 55 C to + 125 C 温度系数:0 PPM / C, 70 PPM / C 端接类型:Radial 封装 / 箱体: 产品:Mica Standard Dipped Capacitors 制造商:Cornell Dubilier |
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