- 您现在的位置：买卖IC网 > PDF目录95922 > MCH3475 1800 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF资料下载
参数资料
| 型号： | MCH3475 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1800 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MCPH3, 3 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 53K |
| 代理商： | MCH3475 |
MCH3475
No. A1000-3/4
IS -- VSD
yfs -- ID
Forward
T
ransfer
Admittance,
y
fs
-
S
Drain Current, ID -- A
Source
Current,
I
S
--
A
Diode Forward Voltage, VSD -- V
SW Time -- ID
Ciss, Coss, Crss -- VDS
A S O
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
-
A
Total Gate Charge, Qg -- nC
Gate-to-Source
V
oltage,
V
GS
-
V
Switching
T
ime,
SW
T
ime
-
ns
Ciss,
Coss,
Crss
-
pF
Drain Current, ID -- A
Drain-to-Source Voltage, VDS -- V
0
0.2
0.6
1.0
0.4
0.8
2.0
1.4
1.2
1.6
1.8
0
1
2
7
5
4
3
9
8
6
10
IT13115
IT13116
2
3
5
7
2
3
5
7
2
3
5
7
0.1
1.0
10
0.01
2
23
5 7
23
5 7
1.0
2
35 7 10
0.1
Operation in this
area is limited by RDS(on).
100ms
100
s
10ms
DC
operation
(T
a=25
°C
)
1ms
35
VDS=10V
ID=1.8A
IDP=7.2A
ID=1.8A
IT13111
7
1.0
10
5
3
2
5
3
IT13113
23
5
0.1
1.0
35
2
7
td(on)
td(off)
tf
tr
VDD=15V
VGS=10V
0.001
1.0
0.01
23
5
7
2
0.1
35
7
2
1.0
35
7
2
7
5
3
2
3
0.1
0.01
2
7
5
3
VDS=10V
25°
C
Ta=
--25
°C
75°
C
010
30
15
20
525
100
10
5
3
7
5
7
2
3
2
IT13114
Ciss
Coss
Crss
f=1MHz
IT13112
0.2
0.4
0.6
0.8
1.0
1.2
0.001
0.01
0.1
1.0
7
5
3
2
7
5
3
2
7
5
3
2
3
2
VGS=0V
75
°C
25
°C
Ta
=
--25
°C
PW
≤10
s
Ta=25
°C
Single pulse
Mounted on a ceramic board (900mm2
0.8mm)
RDS(on) -- Ta
RDS(on) -- VGS
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
m
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
m
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta --
°C
IT13110
02
4
6
8
16
10
12
14
IT13109
390
90
150
120
180
240
300
210
270
330
360
390
60
90
150
120
180
240
300
210
270
330
360
Ta=25
°C
--60
--40
--20
0
20
40
60
80
100
120
140
160
VGS
=10V
, ID
=0.9A
V GS
=4V
, I D
=0.5A
ID=0.5A
0.9A
相关PDF资料 |
PDF描述 |
|---|---|
| MCH3478 | 2000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH3478 | 2000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH3484 | SMALL SIGNAL, FET |
| MCH3914 | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| MCH3914 | 50 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH3475_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH3475-TL-E | 功能描述:MOSFET N-CH 30V 1.8A MCPH3 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MCH3476 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH3476-TL-H | 功能描述:MOSFET NCH 1.8V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MCH3477 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
发布紧急采购，3分钟左右您将得到回复。