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参数资料
| 型号： | MCH6318 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MCPH6, 6 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 36K |
| 代理商： | MCH6318 |
MCH6318
No.7999-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7999
MCH6318
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--30
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
--2
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
--8
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2!0.8mm)
1.0
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--30V, VGS=0
--1
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.2
--2.6
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--1A
1.2
2.0
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--1A, VGS=--10V
110
145
m
RDS(on)2
ID=--0.5A, VGS=--4V
205
290
m
Input Capacitance
Ciss
VDS=--10V, f=1MHz
200
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
47
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
32
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit
7.2
ns
Rise Time
tr
See specified Test Circuit
2.9
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit
21
ns
Fall Time
tf
See specified Test Circuit
8.7
ns
Marking : JS
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
11205 TS IM TB-00001071
相关PDF资料 |
PDF描述 |
|---|---|
| MCH6321 | 4 A, 20 V, 0.083 ohm, P-CHANNEL, Si, POWER, MOSFET |
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| MCH6325 | 2 A, 60 V, 0.255 ohm, P-CHANNEL, Si, POWER, MOSFET |
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| MCH6331 | 3.5 A, 30 V, 0.098 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH6320 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| MCH6320-TL-E | 功能描述:MOSFET PCH 1.8V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MCH6321 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| MCH6321_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6321-TL-E | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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