型号: | MCH6318 |
元件分类: | 小信号晶体管 |
英文描述: | 2000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
封装: | MCPH6, 6 PIN |
文件页数: | 3/4页 |
文件大小: | 36K |
代理商: | MCH6318 |
相关PDF资料 |
PDF描述 |
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MCH6321 | 4 A, 20 V, 0.083 ohm, P-CHANNEL, Si, POWER, MOSFET |
MCH6321 | 4 A, 20 V, 0.083 ohm, P-CHANNEL, Si, POWER, MOSFET |
MCH6325 | 2 A, 60 V, 0.255 ohm, P-CHANNEL, Si, POWER, MOSFET |
MCH6325 | 2 A, 60 V, 0.255 ohm, P-CHANNEL, Si, POWER, MOSFET |
MCH6331 | 3.5 A, 30 V, 0.098 ohm, P-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
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MCH6320 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
MCH6320-TL-E | 功能描述:MOSFET PCH 1.8V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
MCH6321 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
MCH6321_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
MCH6321-TL-E | 功能描述:MOSFET SWITCHING DEVICE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |