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参数资料
| 型号： | MCH6444TL |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2500 mA, 35 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | HALOGEN FREE, MCPH6, SC-88, 6 PIN |
| 文件页数： | 2/4页 |
| 文件大小： | 342K |
| 代理商： | MCH6444TL |
MCH6444
No.8935-2/4
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
min
typ
max
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
35
V
Zero-Gate Voltage Drain Current
IDSS
VDS=35V, VGS=0V
1
μA
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
μA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
| yfs |
VDS=10V, ID=1.5A
1.7
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=1.5A, VGS=10V
75
98
mΩ
RDS(on)2
ID=0.75A, VGS=4.5V
118
166
mΩ
RDS(on)3
ID=0.75A, VGS=4V
143
201
mΩ
Input Capacitance
Ciss
VDS=20V, f=1MHz
186
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
36
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
22
pF
Turn-ON Delay Time
td(on)
See specied Test Circuit.
4.2
ns
Rise Time
tr
See specied Test Circuit.
4.7
ns
Turn-OFF Delay Time
td(off)
See specied Test Circuit.
15
ns
Fall Time
tf
See specied Test Circuit.
5.7
ns
Total Gate Charge
Qg
VDS=20V, VGS=10V, ID=2.5A
4
nC
Gate-to-Source Charge
Qgs
VDS=20V, VGS=10V, ID=2.5A
0.9
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=20V, VGS=10V, ID=2.5A
0.7
nC
Diode Forward Voltage
VSD
IS=2.5A, VGS=0V
0.86
1.2
V
Switching Time Test Circuit
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID=1.5A
RL=10Ω
VDD=15V
VOUT
VIN
10V
0V
VIN
MCH6444
ID -- VGS
Drain
Current,
I
D
--
A
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
ID -- VDS
Drain
Current,
I
D
--
A
0
0.5
1.0
2.0
1.5
2.5
0
1
3
2
4
5
0
IT16513
IT16514
0.1
0.4
0.2
0.6
0.5
0.3
0.8
0.7
0.9
1.0
0
1
2345
6
VDS=10V
--25
°C
T
a=75
°C
VGS=2.5V
4.5V
25
°C
10.0V
6.0V
3.5V
16.0V
3.0V
4.0V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH6444-TL-H | 功能描述:MOSFET PNP+NPN RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MCH6445 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6445-TL-E | 功能描述:MOSFET N-CH 60V 4A MCPH6 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MCH6445-TL-W | 制造商:ON Semiconductor 功能描述:NCH 4A 60V 4V DRIVE MCPH6 - Tape and Reel |
| MCH6448 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET Low-Voltage Driver Switching Device Applications |
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