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参数资料
| 型号： | MCH6444TL |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 2500 mA, 35 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | HALOGEN FREE, MCPH6, SC-88, 6 PIN |
| 文件页数： | 3/4页 |
| 文件大小： | 342K |
| 代理商： | MCH6444TL |
MCH6444
No.8935-3/4
Source
Current,
I
S
--
A
Diode Forward Voltage, VSD -- V
Drain Current, ID -- A
| yfs | -- I
D
Forward
T
ransfer
Admittance,
|
y
fs
|
-
S
SW Time -- ID
Switching
T
ime,
SW
T
ime
-
ns
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
m
Ω
Ambient Temperature, Ta --
°C
RDS(on) -- Ta
RDS(on) -- VGS
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
m
Ω
Ciss, Coss, Crss -- VDS
Ciss,
Coss,
Crss
-
pF
Drain-to-Source Voltage, VDS -- V
VGS -- Qg
Total Gate Charge, Qg -- nC
Gate-to-Source
V
oltage,
V
GS
-
V
--60 --40 --20
0
20
40
60
80
100 120 140 160
0
150
100
300
250
200
50
VGS
=4V
, ID
=0.75A
VGS
=10V
, ID=1.5A
VGS
=4.5V
, ID
=0.75A
IT16515
Ta=25
°C
IT16516
ID=0.75A
1.5A
06
4
28
16
14
12
10
50
250
150
100
200
300
0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1
2
3
4
5
6
7
8
10
9
IT16521
IT16517
IT16518
0
0.2
0.4
0.6
0.8
1.0
1.2
0.1
1.0
10
7
5
3
2
5
3
0.1
1.0
23
5 7
10
7
0.01
23
5 7
23
5
Ta=
--25
°C
VDS=10V
0.01
2
VGS=0V
05
3
7
5
7
5
3
2
100
1000
10
2
35
10
15
20
25
30
Ciss
Coss
Crss
IT16520
T
a=75
°C
25
°C
--
2
5°
C
f=1MHz
75°
C
25
°C
3
0.1
7
5
2
3
7
5
1.0
10
2
3
5
VDS=20V
ID=2.5A
A S O
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
-
A
2
3
5
7
2
0.1
3
5
7
2
1.0
0.01
23 5 7
0.01
0.1
1.0
23 5 7
10
100
IT16511
10ms
100ms
Operation in this area
is limited by RDS(on).
ID=2.5A
DC
operation
(T
a=25
°C
)
IDP=10A (PW≤10μs)
1ms
3
5
7
2
10
3
5
7
100
μs
Ta=25
°C
Single pulse
When mounted on ceramic substrate (900mm2
×0.8mm)
IS -- VSD
0.1
1.0
23
5
7
10
23
5
7
VDD=15V
VGS=10V
td(on)
td(off)
tf
IT16519
10
100
1.0
2
3
7
5
7
5
2
3
t r
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH6444-TL-H | 功能描述:MOSFET PNP+NPN RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MCH6445 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6445-TL-E | 功能描述:MOSFET N-CH 60V 4A MCPH6 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:- 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
| MCH6445-TL-W | 制造商:ON Semiconductor 功能描述:NCH 4A 60V 4V DRIVE MCPH6 - Tape and Reel |
| MCH6448 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET Low-Voltage Driver Switching Device Applications |
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