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参数资料
型号： MCH6534
厂商： SANYO SEMICONDUCTOR CO LTD
元件分类： 小信号晶体管
英文描述： 700 mA, 15 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR
封装： MCPH6, 6 PIN
文件页数： 1/4页
文件大小： 33K
代理商： MCH6534
MCH6534
No.7643-1/4
Applications
Low-frequency power amplifier, high-speed switching motor drivers, muting.
Features
Composite type with 2 NPN transistors contained in a single package, facilitating high-density mounting.
Ultrasmall package permitting applied sets to be small and slim.
Small ON-resistance (Ron).
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
20
V
Collector-to-Emitter Voltage
VCEO
15
V
Emitter-to-Base Voltage
VEBO
5V
Collector Current
IC
700
mA
Collector Current (Pulse)
ICP
1.4
A
Collector Dissipation
PC
Mounted on a ceramic board (600mm2!0.8m)
0.5
W
Total Power Dissipation
PT
Mounted on a ceramic board (600mm2!0.8m)
0.55
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=15V, IE=0
100
nA
Emitter Cutoff Current
IEBO
VEB=4V, IC=0
100
nA
DC Current Gain
hFE
VCE=2V, IC=10mA
300
800
Gain-Bandwidth Product
fT
VCE=2V, IC=50mA
330
MHz
Output Capacitance
Cob
VCB=10V, f=1MHz
3.2
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=200mA, IB=10mA
150
300
mV
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=200mA, IB=10mA
0.9
1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=10A, IE=0
20
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=1mA, RBE=∞
15
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=10A, IC=0
5
V
Marking : EG
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7643
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
42004EA TS IM TA-100671
MCH6534
NPN Epitaxial Planar Silicon Transistor
Switching, Driver Applications
相关PDF资料
PDF描述
MCH6535 1000 mA, 15 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
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相关代理商/技术参数
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