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参数资料
| 型号： | MCH6602 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 350 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MCPH6, 6 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 49K |
| 代理商： | MCH6602 |
MCH6602
No.6445-1/5
Features
Low ON-resistance.
Ultrahigh-speed switching.
1.5V drive.
Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
30
V
Gate-to-Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
0.35
A
Drain Current (Pulse)
IDP
PW≤10s, duty cycle≤1%
1.4
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2
0.8mm) 1unit
0.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=100A
0.4
1.3
V
Forward Transfer Admittance
yfs
VDS=10V, ID=80mA
0.15
0.22
S
RDS(on)1
ID=80mA, VGS=4V
2.9
3.7
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=40mA, VGS=2.5V
3.7
5.2
RDS(on)3
ID=10mA, VGS=1.5V
6.4
12.8
Input Capacitance
Ciss
VDS=10V, f=1MHz
7.0
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
5.9
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
2.3
pF
Marking : FB
Continued on next page.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN6445B
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
12407 TI IM TC-00000415 / 70306 / 42806PE MS IM TB-00002288 / 30300 TS (KOTO) TA-2509
SANYO Semiconductors
DATA SHEET
MCH6602
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
相关PDF资料 |
PDF描述 |
|---|---|
| MCH6602 | 350 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6603 | 140 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6604 | 250 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6604 | 250 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6605 | 140 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH6602_07 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6602_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6602-TL-E | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MCH6603 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| MCH6603_06 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
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