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参数资料
| 型号： | MCH6602 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 350 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MCPH6, 6 PIN |
| 文件页数： | 3/5页 |
| 文件大小： | 49K |
| 代理商： | MCH6602 |
MCH6602
No.6445-3/5
RDS(on) -- ID
RDS(on) -- VGS
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
RDS(on) -- Ta
yfs -- ID
RDS(on) -- ID
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
Drain Current, ID -- A
RDS(on) -- ID
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
Drain Current, ID -- A
Static
Drain-to-Source
On-State
Resistance,
R
DS
(on)
-
Ambient Temperature, Ta --
°C
Forward
T
ransfer
Admittance,
y
fs
-
S
--60
0
--40
--20
1
020
2
40
60
3
4
5
6
7
80
100
120
140
160
I D
=40mA,
V GS
=2.5V
ID=80mA,
VGS
=4.0V
0.01
0.1
23
5
7
23
5
0.1
7
5
3
2
7
5
3
2
1.0
VDS=10V
75°C
Ta=
--25°
C
IT00035
IT00036
0.01
0.1
23
5
7
23
5
10
1.0
7
5
3
2
VGS=2.5V
1.0
0.001
0.01
23
5
7
23
5
100
10
7
5
3
2
7
5
3
2
VGS=1.5V
Ta=75
°C
25
°C
--25
°C
--25
°C
25
°C
Ta=75
°C
IT00033
IT00034
25
°C
0
12
1
34
2
56
3
4
5
6
7
8
9
10
78
9
10
Ta=25
°C
0.01
0.1
23
5
7
23
5
10
7
5
3
2
1.0
25
°C
--25
°C
Ta=75
°C
IT00031
IT00032
VGS=4V
ID=40mA
80mA
ID -- VDS
ID -- VGS
Drain
Current,
I
D
--
A
Gate-to-Source Voltage, VGS -- V
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
--
A
0
0.02
0.2
0.06
0.04
0.08
0.4
0.10
0.12
0.14
0.16
0.6
0.8
1.0
0.1
0.3
0.5
0.7
0.9
VGS=1.5V
2.0V
2.5V
4.0V
3.5V
3.0V
6.0V
0
0.5
1.0
1.5
2.0
0.15
0.10
0.05
0.30
0.25
0.20
2.5
3.0
VDS=10V
T
a=
--25
°C
25
°C
75
°C
IT00029
IT00030
相关PDF资料 |
PDF描述 |
|---|---|
| MCH6602 | 350 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6603 | 140 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6604 | 250 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6604 | 250 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6605 | 140 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH6602_07 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6602_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6602-TL-E | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MCH6603 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| MCH6603_06 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
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