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参数资料
| 型号： | MCH6604 |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 250 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MCPH6, 6 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 38K |
| 代理商： | MCH6604 |
MCH6604
No.6459-2/5
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Turn-ON Delay Time
td(on)
See specified Test Circuit.
18
ns
Rise Time
tr
See specified Test Circuit.
42
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
190
ns
Fall Time
tf
See specified Test Circuit.
105
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=100mA
1.57
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=100mA
0.20
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=100mA
0.32
nC
Diode Forward Voltage
VSD
IS=100mA, VGS=0V
0.85
1.2
V
Package Dimensions
Electrical Connection
unit : mm
7022A-006
Switching Time Test Circuit
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
2.0
0.25
1.6
2.1
0.25
0.85
0.3
0.65
0.15
0 to 0.02
0.07
65
4
12
3
65
4
12
3
PW=10
s
D.C.
≤1%
4V
0V
VIN
P.G
50
G
S
ID=50mA
RL=500
VDD=25V
VOUT
D
MCH6604
65
4
12
3
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Top view
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH6604_06 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6604-TL-E | 功能描述:MOSFET NCH+NCH 2.5V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MCH6605 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| MCH6605_12 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6605-TL-E | 制造商:ON Semiconductor 功能描述:PCH+PCH 4V DRIVE SERIES - Tape and Reel 制造商:ON Semiconductor 功能描述:REEL / PCH+PCH 4V DRIVE SERIES |
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