参数资料
型号: MCH6606
厂商: SANYO SEMICONDUCTOR CO LTD
元件分类: 小信号晶体管
英文描述: 250 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: MCPH6, 6 PIN
文件页数: 1/4页
文件大小: 49K
代理商: MCH6606
MCH6606
No.6461-1/5
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
50
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
0.25
A
Drain Current (Pulse)
IDP
PW≤10s, duty cycle≤1%
1
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2
0.8mm) 1unit
0.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
50
V
Zero-Gate Voltage Drain Current
IDSS
VDS=50V, VGS=0V
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=100A1
2.4
V
Forward Transfer Admittance
yfs
VDS=10V, ID=50mA
85
120
mS
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=50mA, VGS=10V
5.8
7.5
RDS(on)2
ID=30mA, VGS=4V
7.5
10.5
Marking : FF
Continued on next page.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN6461B
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
's products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
's products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
20707 TI IM TC-00000496 / 70306 / 52506PE MS IM TB-00002285 / 30300 TS (KOTO) TA-2461
SANYO Semiconductors
DATA SHEET
MCH6606
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
相关PDF资料
PDF描述
MCH6608 650 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MCH6612 450 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MCH6613 350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
MCH6613 350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
MCH6614 350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
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