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参数资料
| 型号： | MCH6614 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MCPH6, 6 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 53K |
| 代理商： | MCH6614 |
MCH6614
No.6795-1/7
Features
The MCH6614 incorporates two elements in the same package which are N-channel and P-channel low
ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting.
Excellent ON-resistance characteristic.
1.5V drive.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
N-channel
P-channel
Unit
Drain-to-Source Voltage
VDSS
30
--30
V
Gate-to-Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
0.35
--0.4
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
1.4
--1.6
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2!0.8mm)1unit
0.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[N-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=100A
0.4
1.3
V
Forward Transfer Admittance
yfs
VDS=10V, ID=80mA
150
220
mS
RDS(on)1
ID=80mA, VGS=4V
2.9
3.7
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=40mA, VGS=2.5V
3.7
5.2
RDS(on)3
ID=10mA, VGS=1.5V
6.4
12.8
Input Capacitance
Ciss
VDS=10V, f=1MHz
7.0
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
5.9
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
2.3
pF
Marking : FN
Continued on next page.
Ordering number : EN6795A
70306 / 52506PE MS IM TB-00002277 / 20101 TS IM TA-2909
MCH6614
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
SANYO Semiconductors
DATA SHEET
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
相关PDF资料 |
PDF描述 |
|---|---|
| MCH6615 | 650 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6616 | 1600 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6616 | 1600 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6619 | 1000 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6619 | 1000 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH6615 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| MCH6615-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETNP CHSC-82 |
| MCH6616 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| MCH6616-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NN CH 20V 1.6A SC-82 |
| MCH6617 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P CHANNEL MOS SILICON TRANSISTOR |
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