参数资料
型号: MCH6619
厂商: SANYO SEMICONDUCTOR CO LTD
元件分类: 小信号晶体管
英文描述: 1000 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: MCPH6, 6 PIN
文件页数: 1/4页
文件大小: 28K
代理商: MCH6619
MCH6619
No.7156-1/4
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7156
MCH6619
Package Dimensions
unit : mm
2173A
[MCH6619]
41002 TS IM TA-3488
P-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--30
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
--1.0
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
--4.0
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2!0.8mm)1unit
0.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0
--30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--30V, VGS=0
--1
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.2
--2.6
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--500mA
0.57
0.82
S
RDS(on)1
ID=--500mA, VGS=--10V
420
550
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=--300mA, VGS=--4V
720
1000
m
Marking : FT
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
12
3
65
4
32
5
46
(Bottom view)
(Top view)
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Composite type with 2 MOSFETs contained in a single
package, facilitaing high-density mounting.
相关PDF资料
PDF描述
MCH6619 1000 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
MCH6620 1400 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MCH6620 1400 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MCH6626 1600 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
MCH6626 1600 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
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