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参数资料
| 型号： | MCH6626 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1600 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MCPH6, 6 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 47K |
| 代理商： | MCH6626 |
MCH6626
No.7918-1/6
Features
The MCH6626 incorporates an N-channel MOSFET
and a P-channel MOSFET that feature low ON-
resistance and high-speed switching, thereby enabling
high-density mounting.
Excellent ON-resistance characteristic.
2.5V drive.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
MCH6626
Package Dimensions
unit : mm
2173A
[MCH6626]
GI IM
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device Applications
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
12
3
65
4
32
5
46
(Bottom view)
(Top view)
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
N-channel
P-channel
Unit
Drain-to-Source Voltage
VDSS
20
--20
V
Gate-to-Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
1.6
--1.0
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
6.4
--4.0
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2!0.8mm)1unit
0.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[N-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=20V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
0.4
1.3
V
Forward Transfer Admittance
yfs
VDS=10V, ID=0.8A
1.4
2.4
S
RDS(on)1
ID=0.8A, VGS=4V
180
230
m
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=0.4A, VGS=2.5V
220
310
m
RDS(on)3
ID=0.1A, VGS=1.8V
300
450
m
Marking : WA
Continued on next page.
93004 TS IM TA-100982
Ordering number : ENN7918
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| MCH6627 | 1400 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6627 | 1400 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6628 | 350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6629 | 400 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6631 | 350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH6626-TL-E | 功能描述:MOSFET N/P-CH 20V 1.6/1A MCPH6 RoHS:是 类别:分离式半导体产品 >> FET - 阵列 系列:- 产品目录绘图:8-SOIC Mosfet Package 标准包装:1 系列:- FET 型:2 个 N 沟道（双） FET 特点:逻辑电平门 漏极至源极电压(Vdss):60V 电流 - 连续漏极(Id) @ 25° C:3A 开态Rds（最大）@ Id, Vgs @ 25° C:75 毫欧 @ 4.6A，10V Id 时的 Vgs(th)（最大）:3V @ 250µA 闸电荷(Qg) @ Vgs:20nC @ 10V 输入电容 (Ciss) @ Vds:- 功率 - 最大:1.4W 安装类型:表面贴装 封装/外壳:PowerPAK? SO-8 供应商设备封装:PowerPAK? SO-8 包装:Digi-Reel® 产品目录页面:1664 (CN2011-ZH PDF) 其它名称:SI7948DP-T1-GE3DKR |
| MCH6627 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications |
| MCH6627-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NP CH SC-82 |
| MCH6628 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6628-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NP CH SC-82 |
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