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参数资料
| 型号： | MCH6629 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 400 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MCPH, 6 PIN |
| 文件页数： | 1/5页 |
| 文件大小： | 54K |
| 代理商： | MCH6629 |
MCH6629
No.8239-1/5
Features
Low ON-resistance.
Ultrahigh-speed switching.
1.5V drive.
High ESD voltage (TYP 300V)
[Built-in one side diode for protection between Gate-to-Source].
Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--30
V
Gate-to-Source Voltage (*1)
VGSS
--10
V
Drain Current (DC)
ID
--0.4
A
Drain Current (Pulse)
IDP
PW≤10s, duty cycle≤1%
--1.6
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2
0.8mm) 1unit
0.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
(*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.
Electrical Characteristics at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--30V, VGS=0V
--1
A
Gate-to-Source Leakage Current
IGSS
VGS=--8V, VDS=0V
--1
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--100A
--0.4
--1.4
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--0.2A
0.25
0.42
S
RDS(on)1
ID=--0.2A, VGS=--4V
1.5
1.9
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=--0.1A, VGS=--2.5V
2.0
2.8
RDS(on)3
ID=--10mA, VGS=--1.5V
4.0
8.0
Input Capacitance
Ciss
VDS=--10V, f=1MHz
40
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
8
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
4.5
pF
Marking : YL
Continued on next page.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN8239A
D1306 TI IM TC-00000383 / 22805PE TS IM TB-00001232
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
SANYO Semiconductors
DATA SHEET
MCH6629
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH6629-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET PP CH 30V 0.4A MCPH6 |
| MCH6630 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| MCH6630-TL-E | 制造商:SANYO 功能描述:N+N 30V 0.7A MCPH6 Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NN CH 30V 0.7A SC-82 |
| MCH6631 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:MOS SILICON TRANSISTOR |
| MCH6631-TL-E | 制造商:SANYO 功能描述:P+N 12V 1.5A MCPH6 Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NP CH SC-82 制造商:Sanyo 功能描述:0 |
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