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参数资料
| 型号： | MCH6631 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MCPH6, 6 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 45K |
| 代理商： | MCH6631 |
MCH6631
No.7444-1/6
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
N-channel
P-channel
Unit
Drain-to-Source Voltage
VDSS
30
--12
V
Gate-to-Source Voltage
VGSS
±10
V
Drain Current (DC)
ID
0.35
--1.5
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
1.4
--6
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2!0.8mm)1unit
0.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
-55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[N-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0
10
A
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=100A
0.4
1.3
V
Forward Transfer Admittance
yfs
VDS=10V, ID=80mA
150
220
mS
RDS(on)1
ID=80mA, VGS=4V
2.9
3.7
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=40mA, VGS=2.5V
3.7
5.2
RDS(on)3
ID=10mA, VGS=1.5V
6.4
12.8
Marking : WF
Continued on next page.
Features
The MCH6631 incorporates a N-channel MOSFET
and a P-channel MOSFET that feature low ON-
resistance and high-speed switching, thereby enabling
high-density mounting.
Excellent ON-resistance characteristic.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7444
MCH6631
Package Dimensions
unit : mm
2173A
[MCH6631]
GI IM
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel and P-Channel Silicon MOSFETs
Ultrahigh-Speed Switching Applications
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
12
3
65
4
32
5
46
(Bottom view)
(Top view)
22004 TS IM TA-3370
2.5V drive(N-ch), 1.8V drive(P-ch).
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| MCH6649 | 200 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH6631-TL-E | 制造商:SANYO 功能描述:P+N 12V 1.5A MCPH6 Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NP CH SC-82 制造商:Sanyo 功能描述:0 |
| MCH6632 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:MCH6632 |
| MCH6632-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NP CH SC-82 |
| MCH6634-TL-E | 制造商:SANYO 功能描述:P+N 30V 0.4A MCPH6 Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NP CH SC-82 |
| MCH6635 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
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