- 您现在的位置：买卖IC网 > PDF目录95925 > MCH6634 700 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF资料下载
参数资料
| 型号： | MCH6634 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 700 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MCPH6, 6 PIN |
| 文件页数： | 1/7页 |
| 文件大小： | 59K |
| 代理商： | MCH6634 |
MCH6634
No.8229-1/7
Features
The MCH6634 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance
and ultrahigh-speed switching, thereby enabling high-density mounting.
Excellent ON-resistance characteristics.
1.5V drive.
High resistance to damage from ESD (typ 300V) [with a protection diode connected between the gate and source].
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
N-channel
P-channel
Unit
Drain-to-Source Voltage
VDSS
30
--30
V
Gate-to-Source Voltage (*1)
VGSS
10
--10
V
Drain Current (DC)
ID
0.7
--0.4
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
2.8
--1.6
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2!0.8mm) 1unit
0.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
(*1) : Note, when designing a circuit using this product, that it has a gate (oxide film) protection diode connected only between its gate and source.
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[N-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0V
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0V
1
A
Gate-to-Source Leakage Current
IGSS
VGS=8V, VDS=0V
1
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=100A
0.4
1.3
V
Forward Transfer Admittance
yfs
VDS=10V, ID=350mA
0.45
0.8
S
RDS(on)1
ID=350mA, VGS=4V
0.7
0.9
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=200mA, VGS=2.5V
0.8
1.15
RDS(on)3
ID=10mA, VGS=1.5V
1.6
2.4
Marking : WJ
Continued on next page.
Ordering number : EN8229A
70306 / 42806 MS IM TB-00002272 / 21805PE TS IM TA-100976
MCH6634
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
SANYO Semiconductors
DATA SHEET
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
相关PDF资料 |
PDF描述 |
|---|---|
| MCH6646 | 2000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6646 | 2000 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6649 | 200 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6649 | 200 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6651 | 200 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH6634-TL-E | 制造商:SANYO 功能描述:P+N 30V 0.4A MCPH6 Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NP CH SC-82 |
| MCH6635 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| MCH6635-TL-E | 制造商:SANYO 功能描述:P+P 20V 0.8A MCPH6 Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET PP CH 20V 0.8A MCPH6 制造商:Sanyo 功能描述:0 |
| MCH6644 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device |
| MCH6644-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NP CH SC-82 |
发布紧急采购，3分钟左右您将得到回复。