- 您现在的位置：买卖IC网 > PDF目录95925 > MCH6627 (SANYO SEMICONDUCTOR CO LTD) 1400 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF资料下载
参数资料
| 型号： | MCH6627 |
| 厂商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 1400 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MCPH6, 6 PIN |
| 文件页数： | 1/6页 |
| 文件大小： | 50K |
| 代理商： | MCH6627 |
MCH6627
No.8000-1/6
Features
The MCH6627 incorporates a N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
high-speed switching, thereby enabling high-density mounting.
Excellent ON-resistance characteristic.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
N-channel
P-channel
Unit
Drain-to-Source Voltage
VDSS
30
--30
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
1.4
--1.0
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
5.6
--4.0
A
Allowable Power Dissipation
PD
Mounted on a ceramic board (900mm2!0.8mm)1unit
0.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
[N-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=30V, VGS=0
1
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.2
2.6
V
Forward Transfer Admittance
yfs
VDS=10V, ID=0.7A
0.6
1.1
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=0.7A, VGS=10V
230
300
m
RDS(on)2
ID=0.4A, VGS=4V
400
560
m
Input Capacitance
Ciss
VDS=10V, f=1MHz
65
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
14
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
8
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
5
ns
Rise Time
tr
See specified Test Circuit.
4
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
11
ns
Fall Time
tf
See specified Test Circuit.
3
ns
Marking : WB
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN8000
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N2504 TS IM TB-00000453
MCH6627
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device
Applications
相关PDF资料 |
PDF描述 |
|---|---|
| MCH6628 | 350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6629 | 400 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6631 | 350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6631 | 350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| MCH6634 | 700 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH6627-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NP CH SC-82 |
| MCH6628 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6628-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NP CH SC-82 |
| MCH6629 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P-Channel Silicon MOSFET General-Purpose Switching Device Applications |
| MCH6629-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET PP CH 30V 0.4A MCPH6 |
发布紧急采购，3分钟左右您将得到回复。