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参数资料
| 型号： | MCH6612 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 450 mA, 50 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MCPH6, 6 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 53K |
| 代理商： | MCH6612 |
MCH6612
No.7078-2/5
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Input Capacitance
Ciss
VDS=10V, f=1MHz
22
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
12
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
4.6
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
12
ns
Rise Time
tr
See specified Test Circuit.
12
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
260
ns
Fall Time
tf
See specified Test Circuit.
110
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=200mA
1.86
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=200mA
0.28
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=200mA
0.45
nC
Diode Forward Voltage
VSD
IS=200mA, VGS=0V
0.83
1.2
V
Package Dimensions
Electrical Connection
unit : mm (typ)
7022A-006
Switching Time Test Circuit
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
2.0
0.25
1.6
2.1
0.25
0.85
0.3
0.65
0.15
0 to 0.02
0.07
65
4
12
3
65
4
12
3
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID=100mA
RL=250Ω
VDD=25V
VOUT
MCH6612
VIN
10V
0V
VIN
65
4
13
2
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Top View
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH6613 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| MCH6613_06 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6613-TL-E | 功能描述:MOSFET PCH+NCH 2.5V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MCH6614 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| MCH6615 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
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