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参数资料
| 型号： | MCH6613 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MCPH6, 6 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 53K |
| 代理商： | MCH6613 |
MCH6613
No.6920-2/7
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Turn-ON Delay Time
td(on)
See specified Test Circuit.
19
ns
Rise Time
tr
See specified Test Circuit.
65
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
155
ns
Fall Time
tf
See specified Test Circuit.
120
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=150mA
1.58
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=150mA
0.26
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=150mA
0.31
nC
Diode Forward Voltage
VSD
IS=150mA, VGS=0V
0.87
1.2
V
[P-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--30V, VGS=0V
--1
A
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--100A
--0.4
--1.4
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--50mA
80
110
mS
RDS(on)1
ID=--50mA, VGS=--4V
8
10.4
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=--30mA, VGS=--2.5V
11
15.4
RDS(on)3
ID=--1mA, VGS=--1.5V
27
54
Input Capacitance
Ciss
VDS=--10V, f=1MHz
7.5
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
5.7
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
1.8
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
24
ns
Rise Time
tr
See specified Test Circuit.
55
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
120
ns
Fall Time
tf
See specified Test Circuit.
130
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--10V, ID=--100mA
1.43
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--10V, ID=--100mA
0.18
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--10V, ID=--100mA
0.25
nC
Diode Forward Voltage
VSD
IS=--100mA, VGS=0V
--0.83
--1.2
V
Package Dimensions
Electrical Connection
unit : mm
7022A-006
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
2.0
0.25
1.6
2.1
0.25
0.85
0.3
0.65
0.15
0 to 0.02
0.07
65
4
12
3
65
4
12
3
65
4
12
3
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Top view
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PDF描述 |
|---|---|
| MCH6613 | 350 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH6613_06 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| MCH6613-TL-E | 功能描述:MOSFET PCH+NCH 2.5V DRIVE SERIES RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| MCH6614 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| MCH6615 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| MCH6615-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETNP CHSC-82 |
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