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参数资料
| 型号： | MCH6615 |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 650 mA, 30 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封装： | MCPH6, 6 PIN |
| 文件页数： | 2/2页 |
| 文件大小： | 54K |
| 代理商： | MCH6615 |
MCH6615
No.6796-2/7
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Turn-ON Delay Time
td(on)
See specified Test Circuit.
32
ns
Rise Time
tr
See specified Test Circuit.
110
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
250
ns
Fall Time
tf
See specified Test Circuit.
160
ns
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=300mA
2.34
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=300mA
0.38
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=300mA
0.45
nC
Diode Forward Voltage
VSD
IS=300mA, VGS=0V
0.8
1.2
V
[P-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--30
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--30V, VGS=0V
--1
A
Gate-to-Source Leakage Current
IGSS
VGS=±8V, VDS=0V
±10
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--100A
--0.4
--1.4
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--100mA
210
300
mS
RDS(on)1
ID=--100mA, VGS=--4V
2.4
3.1
Static Drain-to-Source On-State Resistance
RDS(on)2
ID=--50mA, VGS=--2.5V
3.5
4.9
RDS(on)3
ID=--10mA, VGS=--1.5V
10
20
Input Capacitance
Ciss
VDS=--10V, f=1MHz
28
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
15
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
5.2
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
24
ns
Rise Time
tr
See specified Test Circuit.
75
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
200
ns
Fall Time
tf
See specified Test Circuit.
150
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--10V, ID=--200mA
2
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--10V, ID=--200mA
0.25
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--10V, ID=--200mA
0.35
nC
Diode Forward Voltage
VSD
IS=--200mA, VGS=0V
--0.82
--1.2
V
Package Dimensions
Electrical Connection
unit : mm
7022A-006
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
2.0
0.25
1.6
2.1
0.25
0.85
0.3
0.65
0.15
0 to 0.02
0.07
65
4
12
3
65
4
12
3
65
4
12
3
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Top view
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCH6615-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETNP CHSC-82 |
| MCH6616 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Ultrahigh-Speed Switching Applications |
| MCH6616-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET NN CH 20V 1.6A SC-82 |
| MCH6617 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:P CHANNEL MOS SILICON TRANSISTOR |
| MCH6617-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET PP CH 20V 1A MCPH6 制造商:ON Semiconductor 功能描述: |
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