参数资料
型号: MCH6649
元件分类: 小信号晶体管
英文描述: 200 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: MCPH6, 6 PIN
文件页数: 2/4页
文件大小: 54K
代理商: MCH6649
MCH6649
No. A1216-2/4
Continued from preceding page.
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Input Capacitance
Ciss
VDS=--10V, f=1MHz
35
pF
Output Capacitance
Coss
VDS=--10V, f=1MHz
7.2
pF
Reverse Transfer Capacitance
Crss
VDS=--10V, f=1MHz
2.1
pF
Turn-ON Delay Time
td(on)
See specified Test Circuit.
75
ns
Rise Time
tr
See specified Test Circuit.
170
ns
Turn-OFF Delay Time
td(off)
See specified Test Circuit.
550
ns
Fall Time
tf
See specified Test Circuit.
350
ns
Total Gate Charge
Qg
VDS=--10V, VGS=--4V, ID=--200mA
0.58
nC
Gate-to-Source Charge
Qgs
VDS=--10V, VGS=--4V, ID=--200mA
0.17
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=--10V, VGS=--4V, ID=--200mA
0.12
nC
Diode Forward Voltage
VSD
IS=--200mA, VGS=0V
--0.89
--1.2
V
Package Dimensions
Electrical Connection
unit : mm (typ)
7022A-006
Switching Time Test Circuit
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
SANYO : MCPH6
2.0
0.25
1.6
2.1
0.25
0.85
0.3
0.65
0.15
0 to 0.02
0.07
65
4
12
3
65
4
12
3
PW=10μs
D.C.≤1%
P.G
50Ω
G
S
D
ID= --100mA
RL=150Ω
Rg
VDD= --15V
VOUT
MCH6649
VIN
0V
--4V
VIN
Rg=5kΩ
65
4
13
2
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
Top view
相关PDF资料
PDF描述
MCH6651 200 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
MCH6651 200 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
MCH6654 200 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MCH6654 200 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
MCH6655 120 mA, 60 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
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