参数资料
型号: MCH6649
元件分类: 小信号晶体管
英文描述: 200 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
封装: MCPH6, 6 PIN
文件页数: 4/4页
文件大小: 54K
代理商: MCH6649
MCH6649
No. A1216-4/4
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
Note on usage : Since the MCH6649 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
PS
This catalog provides information as of May, 2008. Specifications and information herein are subject
to change without notice.
VGS -- Qg
Total Gate Charge, Qg -- nC
Gate-to-Source
V
oltage,
V
GS
--
V
A S O
Drain-to-Source Voltage, VDS -- V
Drain
Current,
I
D
-
A
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
--4.0
--0.5
--1.0
--1.5
--2.0
--2.5
--3.0
--3.5
IT11706
VDS= --10V
ID= --200mA
IT13698
--0.1
--1.0
--10
23
5
7
23
5
7
2
3
5
--0.1
--0.001
--0.01
2
3
5
7
2
3
5
7
--1.0
2
3
5
7
2
100ms
DC
operation
(T
a=25
°C)
10ms
IDP= --800mA
ID= --200mA
1ms
Operation in this
area is limited by RDS(on).
PW
≤10μs
Ta=25
°C
Single pulse
When mounted on ceramic substrate (900mm2
0.8mm) 1unit
PD -- Ta
Ambient Temperature, Ta --
°C
Allowable
Power
Dissipation,
P
D
--
W
0
20
40
60
80
100
120
0.2
0.8
0.6
0.4
140
160
IT13694
When mounted on ceramic substrate
(900mm2
0.8mm) 1unit
相关PDF资料
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MCH6651 200 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET
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