参数资料
型号: MCIMX31DVKN5DR2
厂商: Freescale Semiconductor
文件页数: 34/118页
文件大小: 0K
描述: IC MPU I.MX31 CONSUMR 457TMAP
标准包装: 1,000
系列: i.MX31
核心处理器: ARM11
芯体尺寸: 32-位
速度: 532MHz
连通性: 1 线,ATA,EBI/EMI,FIR,I²C,MMC/SD,PCMCIA,SIM,SPI,SSI,UART/USART,USB,USB OTG
外围设备: DMA,LCD,POR,PWM,WDT
程序存储器类型: ROMless
RAM 容量: 16K x 8
电压 - 电源 (Vcc/Vdd): 1.22 V ~ 3.3 V
振荡器型: 外部
工作温度: 0°C ~ 70°C
封装/外壳: 457-LFBGA
包装: 带卷 (TR)
MCIMX31/MCIMX31L Technical Data, Rev. 4.3
22
Freescale Semiconductor
Electrical Characteristics
4.3.2
AC Electrical Characteristics
Figure 4 depicts the load circuit for outputs. Figure 5 depicts the output transition time waveform. The
range of operating conditions appears in Table 16 for slow general I/O, Table 17 for fast general I/O, and
Table 18 for DDR I/O (unless otherwise noted).
Figure 4. Load Circuit for Output
Figure 5. Output Transition Time Waveform
High-Level DC input voltage
VIH
0.7*NVCC
NVCC
NVCC+0.3
V
Low-Level DC input voltage
VIL
–0.3
0
0.3*NVCC
V
Tri-state leakage current
IOZ
VI = NVCC or GND
I/O = High Z
——
±2
μA
1 Use of DDR Drive can result in excessive overshoot and ringing.
Table 16. AC Electrical Characteristics of Slow1 General I/O
1 Fast/slow characteristic is selected per GPIO (where available) by “slew rate” control. See reference manual.
ID
Parameter
Symbol
Test
Condition
Min
Typ
Max
Units
PA1
Output Transition Times (Max Drive)
tpr
25 pF
50 pF
0.92
1.5
1.95
2.98
3.17
4.75
ns
Output Transition Times (High Drive)
tpr
25 pF
50 pF
1.52
2.75
—4.81
8.42
ns
Output Transition Times (Std Drive)
tpr
25 pF
50 pF
2.79
5.39
—8.56
16.43
ns
Table 15. DDR (Double Data Rate) I/O DC Electrical Parameters (continued)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Test Point
From Output
Under Test
CL
CL includes package, probe and fixture capacitance
0V
NVCC
20%
80%
20%
PA1
Output (at I/O)
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