参数资料
型号: MCM69F536CTQ8.5
厂商: FREESCALE SEMICONDUCTOR INC
元件分类: SRAM
英文描述: 32K X 36 CACHE SRAM, 8.5 ns, PQFP100
封装: TQFP-100
文件页数: 8/12页
文件大小: 355K
代理商: MCM69F536CTQ8.5
MCM69F536C
5
MOTOROLA FAST SRAM
TRUTH TABLE (See Notes 1 through 4)
Next Cycle
Address
Used
SE1
SE2
SE3
ADSP
ADSC
ADV
G 3
DQx
Write 2, 4
Deselect
None
1
X
0
X
High–Z
X
Deselect
None
0
X
1
0
X
High–Z
X
Deselect
None
0
X
0
X
High–Z
X
Deselect
None
X
1
0
X
High–Z
X
Deselect
None
X
0
X
1
0
X
High–Z
X
Begin Read
External
0
1
0
X
0
DQ
READ
Begin Read
External
0
1
0
1
0
X
0
DQ
READ
Continue Read
Next
X
1
0
1
High–Z
READ
Continue Read
Next
X
1
0
DQ
READ
Continue Read
Next
1
X
1
0
1
High–Z
READ
Continue Read
Next
1
X
1
0
DQ
READ
Suspend Read
Current
X
1
High–Z
READ
Suspend Read
Current
X
1
0
DQ
READ
Suspend Read
Current
1
X
1
High–Z
READ
Suspend Read
Current
1
X
1
0
DQ
READ
Begin Write
Current
X
1
X
High–Z
WRITE
Begin Write
Current
1
X
1
X
High–Z
WRITE
Begin Write
External
0
1
0
1
0
X
High–Z
WRITE
Continue Write
Next
X
1
0
X
High–Z
WRITE
Continue Write
Next
1
X
1
0
X
High–Z
WRITE
Suspend Write
Current
X
1
X
High–Z
WRITE
Suspend Write
Current
1
X
1
X
High–Z
WRITE
NOTES: 1. X = Don’t Care. 1 = logic high. 0 = logic low.
2. Write is defined as either 1) any SBx and SW low or 2) SGW is low.
3. G is an asynchronous signal and is not sampled by the clock K. G drives the bus immediately (tGLQX) following G going low.
4. On write cycles that follow read cycles, G must be negated prior to the start of the write cycle to ensure proper write data setup times.
G must also remain negated at the completion of the write cycle to ensure proper write data hold times.
LINEAR BURST ADDRESS TABLE (LBO = VSS)
1st Address (External)
2nd Address (Internal)
3rd Address (Internal)
4th Address (Internal)
X . . . X00
X . . . X01
X . . . X10
X . . . X11
X . . . X01
X . . . X10
X . . . X11
X . . . X00
X . . . X10
X . . . X11
X . . . X00
X . . . X01
X . . . X11
X . . . X00
X . . . X01
X . . . X10
INTERLEAVED BURST ADDRESS TABLE (LBO = VDD)
1st Address (External)
2nd Address (Internal)
3rd Address (Internal)
4th Address (Internal)
X . . . X00
X . . . X01
X . . . X10
X . . . X11
X . . . X01
X . . . X00
X . . . X11
X . . . X10
X . . . X11
X . . . X00
X . . . X01
X . . . X11
X . . . X10
X . . . X01
X . . . X00
WRITE TRUTH TABLE
Cycle Type
SGW
SW
SBa
SBb
SBc
SBd
Read
H
X
Read
H
L
H
Write Byte a
H
L
H
Write Byte b
H
L
H
L
H
Write Byte c
H
L
H
L
H
Write Byte d
H
L
H
L
Write All Bytes
H
L
Write All Bytes
L
X
F
re
e
sc
a
le
S
e
m
ic
o
n
d
u
c
to
r,
I
Freescale Semiconductor, Inc.
For More Information On This Product,
Go to: www.freescale.com
n
c
..
.
AR
CH
IVE
D B
Y F
RE
ES
CA
LE
SE
MI
CO
ND
UC
TO
R,
INC
.
相关PDF资料
PDF描述
MCM93422PC 256 X 4 STANDARD SRAM, 45 ns, PDIP22
MCO100-16IO1
MCO150-16IO1
MCO75-12IO1
MCOTS-C-270-28-QT-F-S 1-OUTPUT 150 W DC-DC REG PWR SUPPLY MODULE
相关代理商/技术参数
参数描述
MCM69F536CTQ9 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM69F536CTQ9R 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM69F618C 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM
MCM69F618CTQ10 制造商:Motorola Inc 功能描述:
MCM69F618CTQ10R 制造商:MOTOROLA 制造商全称:Motorola, Inc 功能描述:64K x 18 Bit Flow-Through BurstRAM Synchronous Fast Static RAM