- 您现在的位置：买卖IC网 > Datasheet目录342 > MCP1401T-E/OT (Microchip Technology)IC MOSFET DRVR INV 500MA SOT23-5 Datasheet资料下载
参数资料
| 型号： | MCP1401T-E/OT |
| 厂商： | Microchip Technology |
| 文件页数： | 11/20页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRVR INV 500MA SOT23-5 |
| 标准包装： | 1 |
| 配置： | 低端 |
| 输入类型： | 反相 |
| 延迟时间： | 35ns |
| 电流 - 峰： | 500mA |
| 配置数： | 1 |
| 输出数： | 1 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74A，SOT-753 |
| 供应商设备封装： | SOT-23-5 |
| 包装： | 标准包装 |
| 产品目录页面： | 670 (CN2011-ZH PDF) |
| 其它名称： | MCP1401T-E/OTDKR |
MCP1401/02
4.5
Power Dissipation
4.5.2
QUIESCENT POWER DISSIPATION
The total internal power dissipation in a MOSFET driver
is the summation of three separate power dissipation
elements.
EQUATION 4-1:
The power dissipation associated with the quiescent
current draw depends upon the state of the input pin.
The MCP1401/02 devices have a quiescent current
draw when the input is high of 0.85 mA (typical) and
0.1 mA (typical) when the input is low. The quiescent
power dissipation is shown in Equation 4-3 .
Where:
P T
P T = P L + P Q + P CC
= Total power dissipation
EQUATION 4-3:
P Q = ( I QH × D + I QL × ( 1 – D ) ) × V DD
P L
=
Load power dissipation
Where:
P Q
P CC
=
=
Quiescent power dissipation
Operating power dissipation
I QH
=
Quiescent current in the high
state
D
=
Duty cycle
4.5.1
CAPACITIVE LOAD DISSIPATION
I QL
=
Quiescent current in the low
The power dissipation caused by a capacitive load is a
state
direct function of frequency, total capacitive load, and
V DD
=
MOSFET driver supply voltage
supply voltage. The power lost in the MOSFET driver
for a complete charging and discharging cycle of a
MOSFET is shown in Equation 4-2 .
4.5.3
OPERATING POWER DISSIPATION
The operating power dissipation occurs each time the
EQUATION 4-2:
MOSFET driver output transitions because for a very
short period of time both MOSFETs in the output stage
Where:
P L = f × C T × V DD
2
are on simultaneously. This cross-conduction current
leads to a power dissipation described in Equation 4-4 .
f
C T
V DD
=
=
=
Switching frequency
Total load capacitance
MOSFET driver supply voltage
EQUATION 4-4:
P CC = CC × f × V DD
Where:
CC
=
Cross-conduction constant
(A*sec)
? 2007 Microchip Technology Inc.
f
V DD
=
=
Switching frequency
MOSFET driver supply voltage
DS22052B-page 11
相关PDF资料 |
PDF描述 |
|---|---|
| MCP1403T-E/MF | IC MOSFET DRIVER 4.5A DUAL 8DFN |
| MCP1406-E/SN | IC MOSFET DVR 6A 8SOIC |
| MCP14628T-E/MF | IC MOSFET DVR 2A SYNC BUCK 8-DFN |
| MCP14700T-E/MF | IC MOSFET DRIVER HIGH/LOW 8DFN |
| MCP14E3T-E/MF | IC MOSFET DVR 4.0A DUAL 8DFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| MCP1402 | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:Tiny 500 mA, High-Speed Power MOSFET Driver |
| MCP1402T-E/MC | 功能描述:功率驱动器IC 05A Sngl MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MCP1402T-E/OT | 功能描述:功率驱动器IC 0.5A Sngl MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MCP1403 | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:4.5A Dual High-Speed Power MOSFET Drivers |
| MCP1403-E/MF | 功能描述:功率驱动器IC 4.5A Dual MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。