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| 型号： | MCP1404T-E/SO |
| 厂商： | Microchip Technology |
| 文件页数： | 11/22页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DVR 4.5A DUAL 16SOIC |
| 标准包装： | 1,000 |
| 配置： | 低端 |
| 输入类型： | 非反相 |
| 延迟时间： | 40ns |
| 电流 - 峰： | 4.5A |
| 配置数： | 2 |
| 输出数： | 2 |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 16-SOIC（0.295"，7.50mm 宽） |
| 供应商设备封装： | 16-SOIC |
| 包装： | 带卷 (TR) |
MCP1403/4/5
Placing a ground plane beneath the MCP1403/4/5 will
4.5.2
QUIESCENT POWER DISSIPATION
help as a radiated noise shield as well as providing
some heat sinking for power dissipated within the
device.
The power dissipation associated with the quiescent
current draw depends upon the state of the input pin.
The MCP1403/4/5 devices have a quiescent current
4.5
Power Dissipation
draw when both inputs are high of 1.0 mA (typ) and
0.15 mA (typ) when both inputs are low. The quiescent
The total internal power dissipation in a MOSFET driver
is the summation of three separate power dissipation
elements.
P T = P L + P Q + P CC
Where:
P T = Total power dissipation
P L = Load power dissipation
P Q = Quiescent power dissipation
power dissipation is:
P Q = ( I QH × D + I QL × ( 1 – D ) ) × V DD
Where:
I QH = Quiescent current in the high state
D = Duty cycle
I QL = Quiescent current in the low state
V DD = MOSFET driver supply voltage
P CC = Operating power dissipation
4.5.3
OPERATING POWER DISSIPATION
4.5.1 CAPACITIVE LOAD DISSIPATION
The power dissipation caused by a capacitive load is a
direct function of frequency, total capacitive load, and
supply voltage. The power lost in the MOSFET driver
for a complete charging and discharging cycle of a
MOSFET is:
The operating power dissipation occurs each time the
MOSFET driver output transitions because for a very
short period of time both MOSFETs in the output stage
are on simultaneously. This cross-conduction current
leads to a power dissipation describes as:
P CC = CC × f × V DD
P L = f × C T × V DD
Where:
f = Switching frequency
2
Where:
CC = Cross-conduction constant (A*sec)
f = Switching frequency
V DD = MOSFET driver supply voltage
C T = Total load capacitance
V DD = MOSFET driver supply voltage
? 2007 Microchip Technology Inc.
DS22022B-page 11
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCP1405 | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:4.5A Dual High-Speed Power MOSFET Drivers |
| MCP1405-E/MF | 功能描述:功率驱动器IC 4.5A Dual MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MCP1405-E/P | 功能描述:功率驱动器IC 4.5A Dual MOSFET RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MCP1405-E/SN | 功能描述:功率驱动器IC 4.5A Dual RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MCP1405-E/SO | 功能描述:功率驱动器IC 4.5A Dual MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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