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| 型号： | MCP1416RT-E/OT |
| 厂商： | Microchip Technology |
| 文件页数： | 10/20页 |
| 文件大小： | 0K |
| 描述： | IC PWR MOSFET DVR 1.5A SOT23-5 |
| 标准包装： | 3,000 |
| 类型： | 低端 |
| 输入类型： | 非反相 |
| 输出数： | 1 |
| 导通状态电阻： | 6 欧姆 |
| 电流 - 峰值输出： | 1.5A |
| 电源电压： | 4.5 V ~ 18 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-74A，SOT-753 |
| 供应商设备封装： | SOT-23-5 |
| 包装： | 带卷 (TR) |
MCP1415/16
4.0
APPLICATION INFORMATION
4.1
General Information
V DD = 18V
MOSFET drivers are high-speed, high current devices
which are intended to source/sink high peak currents to
charge/discharge the gate capacitance of external
MOSFETs or IGBTs. In high frequency switching power
supplies, the PWM controller may not have the drive
capability to directly drive the power MOSFET. A
MOSFET driver like the MCP1415/16 family can be
used to provide additional source/sink current
capability.
4.2
MOSFET Driver Timing
The ability of a MOSFET driver to transition from a fully-
off state to a fully-on state are characterized by the
drivers rise time (t R ), fall time (t F ), and propagation
+5V
Input
Input
MCP1416
1 μF
0.1 μF
Ceramic
Output
C L = 1000 pF
90%
delays (t D1 and t D2 ). The MCP1415/16 family of drivers
can typically charge and discharge a 1000 pF load
capacitance in 20 ns along with a typical turn on (t D1 )
show the test circuit and timing waveform used to verify
the MCP1415/16 timing.
0V
18V
Output
0V
10%
t D1 90%
10%
t R
t D2
90%
10%
t F
FIGURE 4-2:
Non-Inverting Driver Timing
V DD = 18V
Waveform.
1 μF
0.1 μF
Ceramic
4.3
Decoupling Capacitors
Careful layout and decoupling capacitors are required
when using power MOSFET drivers. Large current are
required to charge and discharge capacitive loads
Input
+5V
Input
MCP1415
Output
C L = 1000 pF
90%
quickly. For example, approximately 720 mA are
needed to charge a 1000 pF load with 18V in 25 ns.
To operate the MOSFET driver over a wide frequency
range with low supply impedance, a ceramic and a low
ESR film capacitor are recommended to be placed in
parallel between the driver V DD and GND. A 1.0 μF low
ESR film capacitor and a 0.1 μF ceramic capacitor
placed between pins 2 and 4 is required for reliable
operation. These capacitors should be placed close to
0V
18V
10%
t D1
90%
t F
t D2
t R
90%
the driver to minimize circuit board parasitics and
provide a local source for the required current.
Output
0V
10%
10%
FIGURE 4-1:
Waveform.
DS22092E-page 10
Inverting Driver Timing
? 2008-2012 Microchip Technology Inc.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| MCP1416RT-OT | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:Tiny 1.5A, High-Speed Power MOSFET Driver |
| MCP1416T | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:Tiny 1.5A, High-Speed Power MOSFET Driver |
| MCP1416T-E | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:Tiny 1.5A, High-Speed Power MOSFET Driver |
| MCP1416T-E/MC | 功能描述:功率驱动器IC 1.5A SNGL MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
| MCP1416T-E/OT | 功能描述:功率驱动器IC 1.5A SNGL MOSFET Drvr RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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