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| 型号： | MCP14700T-E/MF |
| 厂商： | Microchip Technology |
| 文件页数： | 13/26页 |
| 文件大小： | 0K |
| 描述： | IC MOSFET DRIVER HIGH/LOW 8DFN |
| 标准包装： | 3,300 |
| 配置： | 高端和低端，同步 |
| 输入类型： | 非反相 |
| 延迟时间： | 27ns |
| 电流 - 峰： | 2A |
| 配置数： | 1 |
| 输出数： | 2 |
| 高端电压 - 最大（自引导启动）： | 36V |
| 电源电压： | 4.5 V ~ 5.5 V |
| 工作温度： | -40°C ~ 125°C |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 8-VDFN 裸露焊盘 |
| 供应商设备封装： | 8-DFN-EP（3x3） |
| 包装： | 带卷 (TR) |
MCP14700
5.0
APPLICATION INFORMATION
5.3
Power Dissipation
5.1
Bootstrap Capacitor Select
The power dissipated in the MCP14700 consists of the
power loss associated with the quiescent power and
The selection of the bootstrap capacitor is based upon
the total gate charge of the high-side power MOSFET
and the allowable droop in gate drive voltage while the
high-side power MOSFET is conducting.
EQUATION 5-1:
the gate charge power.
The quiescent power loss can be calculated by the
following equation and is typically negligible compared
to the gate drive power loss.
EQUATION 5-2:
C BOOT ≥ -----------------------------
Q GATE
Δ V DROOP
Where:
P Q = I VCC × V CC
Where:
P Q = Quiescent power loss
C BOOT
Q GATE
=
=
Bootstrap capacitor value
Total gate charge of the high-side
I VCC = No Load Bias Current
V CC = Bias Voltage
MOSFET
Δ V DROO
=
Allowable gate drive voltage droop
The main power loss occurs from the gate charge
power loss. This power loss can be defined in terms of
For example:
Q GATE = 30 nC
Δ V DROOP = 200 mV
C BOOT ≥ 0.15 uF
A low ESR ceramic capacitor is recommend with a
maximum voltage rating that exceeds the maximum
input voltage, V CC , plus the maximum supply voltage,
both the high-side and low-side power MOSFETs.
EQUATION 5-3:
P GATE = P HIGHDR + P LOWDR
P HIGHDR = V CC × Q HIGH × F SW
P LOWDR = V CC × Q LOW × F SW
Where:
V SUPPLY . It is also recommended that the capacitance
of C BOOT does not exceed 1.2 uF.
P GATE =
P HIGHDR =
Total Gate Charge Power Loss
High-Side Gate Charge Power Loss
5.2
Decoupling Capacitor
P LOWDR
=
Low-Side Gate Charge Power Loss
Proper decoupling of the MCP14700 is highly
V CC
=
Bias Supply Voltage
recommended to help ensure reliable operation. This
decoupling capacitor should be placed as close to the
MCP14700 as possible. The large currents required to
quickly charge the capacitive loads are provided by this
Q HIGH =
Q LOW =
High-Side MOSFET Total Gate
Charge
Low-Side MOSFET Total GAte
Charge
capacitor. A low ESR
recommended.
ceramic capacitor is
F SW =
Switching Frequency
? 2009 Microchip Technology Inc.
DS22201A-page 13
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| MCP14E10 | 制造商:MICROCHIP 制造商全称:Microchip Technology 功能描述:3.0A Dual High-Speed Power MOSFET Driver With Enable |
| MCP14E10-E/MF | 功能描述:功率驱动器IC 2A MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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| MCP14E10-E/P | 功能描述:功率驱动器IC 2A MOSFET Driver RoHS:否 制造商:Micrel 产品:MOSFET Gate Drivers 类型:Low Cost High or Low Side MOSFET Driver 上升时间: 下降时间: 电源电压-最大:30 V 电源电压-最小:2.75 V 电源电流: 最大功率耗散: 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 封装:Tube |
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