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参数资料
型号： MCP14E5T-E/MF
厂商： Microchip Technology
文件页数： 1/26页
文件大小： 0K
描述： IC MOSFET DVR 4.0A DUAL 8DFN
标准包装： 3,300
配置： 低端
输入类型： 反相和非反相
延迟时间： 46ns
电流 - 峰： 4A
配置数： 2
输出数： 2
电源电压： 4.5 V ~ 18 V
工作温度： -40°C ~ 125°C
安装类型： 表面贴装
封装/外壳： 8-VDFN 裸露焊盘
供应商设备封装： 8-DFN-S（6x5）
包装： 带卷 (TR)
其它名称： MCP14E5T-E/MFTR
MCP14E3/MCP14E4/MCP14E5
4.0A Dual High-Speed Power MOSFET Drivers With Enable
Features
? High Peak Output Current: 4.0A (typical)
? Independent Enable Function for Each Driver
Output
? Low Shoot-Through/Cross-Conduction Current in
Output Stage
? Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
? High Capacitive Load Drive Capability:
- 2200 pF in 15 ns (typical)
- 5600 pF in 26 ns (typical)
? Short Delay Times: 50 ns (typical)
? Latch-Up Protected: Will Withstand 1.5A Reverse
General Description
The MCP14E3/MCP14E4/MCP14E5 devices are a
family of 4.0A buffers/MOSFET drivers. Dual-inverting,
dual-noninvertering, and complementary outputs are
standard logic options offered.
The MCP14E3/MCP14E4/MCP14E5 drivers are
capable of operating from a 4.5V to 18V single power
supply and can easily charge and discharge 2200 pF
gate capacitance in under 15 ns (typical). They provide
low impedance in both the ON and OFF states to
ensure the MOSFET’s intended state will not be
affected, even by large transients. The MCP14E3/
MCP14E4/MCP14E5 inputs may be driven directly
from either TTL or CMOS (2.4V to 18V).
Current
Additional control of
the MCP14E3/MCP14E4/
? Logic Input Will Withstand Negative Swing Up To
5V
? Space-Saving Packages:
- 8-Lead 6x5 DFN, PDIP, SOIC
Applications
MCP14E5 outputs is allowed by the use of separate
enable functions. The ENB_A and ENB_B pins are
active high and are internally pulled up to V DD . The pins
maybe left floating for standard operation.
The MCP14E3/MCP14E4/MCP14E5 dual-output 4.0A
driver family is offered in both surface-mount and pin-
through-hole packages with a -40°C to +125°C
?
?
?
?
Switch Mode Power Supplies
Pulse Transformer Drive
Line Drivers
Motor and Solenoid Drive
temperature rating. The low thermal resistance of the
thermally enhanced DFN package allows for greater
power dissipation capability for driving heavier
capacitive or resistive loads.
These devices are highly latch-up resistant under any
conditions within their power and voltage ratings. They
are not subject to damage when up to 5V of noise
spiking (of either polarity) occurs on the ground pin.
They can accept, without damage or logic upset, up to
1.5A of reverse current being forced back into their
outputs. All terminals are fully protect against
Electrostatic Discharge (ESD) up to 4 kV.
Package Types
8-Pin
PDIP/SOIC
MCP14E4
MCP14E3 MCP14E5
8-Pin
6x5 DFN (1)
MCP14E4
MCP14E3 MCP14E5
ENB_A
IN A
GND
IN B
1
2
3
4
8
7
6
5
ENB_B
OUT A
V DD
OUT B
ENB_B
OUT A
V DD
OUT B
ENB_B
OUT A
V DD
OUT B
ENB_A
IN A
GND
IN B
ENB_B
OUT A
V DD
OUT B
ENB_B
OUT A
V DD
OUT B
ENB_B
OUT A
V DD
OUT B
Note 1: Exposed pad of the DFN package is electrically isolated.
? 2008 Microchip Technology Inc.
DS22062B-page 1
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