参数资料
型号: MCP14E5T-E/MF
厂商: Microchip Technology
文件页数: 14/26页
文件大小: 0K
描述: IC MOSFET DVR 4.0A DUAL 8DFN
标准包装: 3,300
配置: 低端
输入类型: 反相和非反相
延迟时间: 46ns
电流 - 峰: 4A
配置数: 2
输出数: 2
电源电压: 4.5 V ~ 18 V
工作温度: -40°C ~ 125°C
安装类型: 表面贴装
封装/外壳: 8-VDFN 裸露焊盘
供应商设备封装: 8-DFN-S(6x5)
包装: 带卷 (TR)
其它名称: MCP14E5T-E/MFTR
MCP14E3/MCP14E4/MCP14E5
4.6.2
QUIESCENT POWER DISSIPATION
The power dissipation associated with the quiescent
current draw of the MCP14E3/MCP14E4/MCP14E5
depends upon the state of the input and enable pins.
Refer to the DC Characteristic table for the quiescent
current draw for specific combinations of input and
enable pin states. The quiescent power dissipation is:
EQUATION 4-3:
P Q = ( I QH × D + I QL × ( 1 – D ) ) × V DD
Where:
I QH
D
I QL
V DD
=
=
=
=
Quiescent current in the high
state
Duty cycle
Quiescent current in the low
state
MOSFET driver supply voltage
4.6.3
OPERATING POWER DISSIPATION
The operating power dissipation occurs each time the
MOSFET driver output transitions because for a very
short period of time both MOSFETs in the output stage
are on simultaneously. This cross-conduction current
leads to a power dissipation describes as:
EQUATION 4-4:
P CC = CC × f × V DD
Where:
CC
f
V DD
=
=
=
Cross-conduction constant
(A*sec)
Switching frequency
MOSFET driver supply voltage
DS22062B-page 14
? 2008 Microchip Technology Inc.
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