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| 型号： | MCP1603EV |
| 厂商： | Microchip Technology |
| 文件页数： | 4/26页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL BUCK CONV MCP1603 |
| 标准包装： | 1 |
| 主要目的： | DC/DC，步降 |
| 输出及类型： | 1，非隔离 |
| 输出电压： | 0.8V，1.2V，1.8V，2.5V，和 3.3V |
| 电流 - 输出： | 500mA |
| 输入电压： | 2.7 ~ 5.5 V |
| 稳压器拓扑结构： | 降压 |
| 频率 - 开关： | 2MHz |
| 板类型： | 完全填充 |
| 已供物品： | 板 |
| 已用 IC / 零件： | MCP1603 |
| 产品目录页面： | 664 (CN2011-ZH PDF) |
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MCP1603
1.0
ELECTRICAL
CHARACTERISTICS
? Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
Absolute Maximum Ratings ?
V IN - GND.......................................................................+6.0V
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
All Other I/O ...............................(GND - 0.3V) to (V IN + 0.3V)
L X to GND .............................................. -0.3V to (V IN + 0.3V)
Output Short Circuit Current..................................Continuous
Power Dissipation (Note 5) ..........................Internally Limited
Storage Temperature.....................................-65°C to +150°C
Ambient Temp. with Power Applied.................-40°C to +85°C
Operating Junction Temperature...................-40°C to +125°C
ESD Protection On All Pins:
HBM..............................................................................4 kV
MM...............................................................................300V
DC CHARACTERISTICS
Electrical Characteristics: Unless otherwise indicated, V IN = SHDN = 3.6V, C OUT = C IN = 4.7 μF, L = 4.7 μH, V OUT (ADJ) = 1.8V,
I OUT = 100 mA, T A = +25°C. Boldface specifications apply over the T A range of -40°C to +85°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Characteristics
Input Voltage
Maximum Output Current
Shutdown Current
Quiescent Current
V IN
I OUT
I IN_SHDN
I Q
2.7
500
—
—
—
—
0.1
45
5.5
—
1
60
V
mA
μA
μA
SHDN = GND
SHDN = V IN , I OUT = 0 mA
Shutdown/UVLO/Thermal Shutdown Characteristics
SHDN , Logic Input Voltage Low
SHDN , Logic Input Voltage High
V IL
V IH
—
45
—
—
15
—
%V IN V IN = 2.7V to 5.5V
%V IN V IN = 2.7V to 5.5V
SHDN, Input Leakage Current
Undervoltage Lockout
I L_SHDN
UVLO
-1.0
2.12
±0.1
2.28
1.0
2.43
μA
V
V IN = 2.7V to 5.5V
V IN Falling
Undervoltage Lockout Hysteresis UVLO HYS
—
140
—
mV
Thermal Shutdown T SHD
—
150
—
°C
Thermal Shutdown Hysteresis
T SHD-HYS
—
10
—
°C
Note 1:
2:
3:
4:
5:
6:
The minimum V IN has to meet two conditions: V IN ≥ 2.7V and V IN ≥ V OUT + 0.5V.
Reference Feedback Voltage Tolerance applies to adjustable output voltage setting.
V R is the output voltage setting.
The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable
temperature and the thermal resistance from junction to air (i.e. T A , T J , θ JA ). Exceeding the maximum
allowable power dissipation causes the device to initiate thermal shutdown.
The internal MOSFET switches have an integral diode from the L X pin to the V IN pin, and from the L X pin
to the GND pin. In cases where these diodes are forward-biased, the package power dissipation limits
must be adhered to. Thermal protection is not able to limit the junction temperature for these cases.
The current limit threshold is a cycle-by-cycle peak current limit.
DS22042A-page 4
? 2007 Microchip Technology Inc.
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