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参数资料
| 型号： | MCP1612EV |
| 厂商： | Microchip Technology |
| 文件页数： | 4/22页 |
| 文件大小： | 0K |
| 描述： | BOARD EVAL FOR MCP1612 |
| 标准包装： | 1 |
| 主要目的： | DC/DC，步降 |
| 输出及类型： | 1，非隔离 |
| 输出电压： | 0.8V，1V，1.2V，1.4V，1.7V，2.4V 和 3.3V |
| 电流 - 输出： | 1A |
| 输入电压： | 2.7 ~ 5.5 V |
| 稳压器拓扑结构： | 降压 |
| 频率 - 开关： | 1.4MHz |
| 板类型： | 完全填充 |
| 已供物品： | 板 |
| 已用 IC / 零件： | MCP1612 |
| 产品目录页面： | 669 (CN2011-ZH PDF) |
MCP1612
1.0
ELECTRICAL
CHARACTERISTICS
? Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
Absolute Maximum Ratings ?
V IN – A GND .......................................................................6.0V
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
(SHDN, FB, V CC , Comp ........... (A GND – 0.3V) to (V IN + 0.3V)
L X to P GND .............................................. -0.3V to (V IN + 0.3V)
P GND to A GND ................................................... -0.3V to +0.3V
Output Short Circuit Current ................................. Continuous
Storage temperature .....................................-65°C to +150°C
Ambient Temp. with Power Applied.................-40°C to +85°C
Operating Junction Temperature...................-40°C to +125°C
ESD protection on all pins (HBM) ....................................... 4 kV
ESD protection on all pins (MM) ......................................... 300V
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, V IN = V CC = V SHDN = 3.3V, V OUT = 1.8V, C IN = C OUT = 10 μF, L = 3.3 μH,
I LOAD = 100 mA, T A = +25°C. Boldface specifications apply over the T A range of -40°C to +85°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Voltage
Input Operating Voltage
V IN
2.7
—
5.5
V
Input Shutdown Current
Input Quiescent Current
I(V IN )
I(V IN )
—
—
0.01
5
1
7
μA
mA
Shutdown mode (SHDN = GND)
I LOAD = 0 mA
Oscillator Characteristics
Internal Oscillator Frequency
F OSC
1.2
1.4
1.6
MHz
Internal Power Swicthes
R DSon P-Channel
R DSon N-Channel
L X Pin Leakage Current
R DSon-P
R DSon-N
I LX
—
—
-1
300
300
—
—
—
1
m Ω
m Ω
μA
I P = 250 mA
I N = 250 mA
SHDN = 0V, V IN = 5.5V, L X = 0V,
L X = 5.5V
Positive Current Limit Threshold
Negative Current Limit Threshold
+I LX(MAX)
-I LX(MAX)
—
—
2.3
-1.4
—
—
A
A
Feedback Characteristics
Transconductance from FB to
g m
35
62
90
μA/V
COMP
Output Voltage
Output Voltage Range
Reference Feedback Voltage
Feedback Input Bias Current
V OUT
V FB
I VFB
0.8
0.78
—
—
0.8
1
V IN
0.82
—
V
V
nA
Line Regulation
Load Regulation
V LINE-REG
V LOAD-REG
—
—
0.15
0.25
0.5
—
%/V
%
V IN = 2.7V to 5.5V, I LOAD = 100 mA
V IN = 4.2V, I LOAD = 100 mA to 1A
Note 1:
2:
The integrated MOSFET switches have an integral diode from the L X pin to V IN and from L X to P GND . In cases where
these diodes are forward-biased, the package power dissipation limits must be adhered to. Thermal protection is not
able to regulate the junction temperature for these cases.
UVLO is specified for a falling V IN . Once the UVLO is activated, the UVLO- HYS must be overcome before the device will
return to operation.
DS21921B-page 4
? 2005 Microchip Technology Inc.
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