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参数资料
| 型号： | MCP1630DM-DDBS1 |
| 厂商： | Microchip Technology |
| 文件页数： | 7/26页 |
| 文件大小： | 0K |
| 描述： | BOARD DEMO BOOST AUTO INPUT |
| 标准包装： | 1 |
| 主要目的： | DC/DC，步升 |
| 输出及类型： | 1，非隔离 |
| 输出电压： | 36.5V |
| 电流 - 输出： | 400mA |
| 输入电压： | 9 ~ 18 V |
| 稳压器拓扑结构： | 升压 |
| 频率 - 开关： | 500kHz |
| 板类型： | 完全填充 |
| 已供物品： | 板 |
| 已用 IC / 零件： | MCP1630 |
| 产品目录页面： | 668 (CN2011-ZH PDF) |
| 相关产品： | MCP1630V-E/MC-ND - IC REG CTRLR BST FLYBK ISO 8-DFN MCP1630-E/MC-ND - IC REG CTRLR BST FLYBK ISO 8-DFN MCP1630VT-E/MC-ND - IC REG CTRLR BST FLYBK ISO 8-DFN MCP1630T-E/MC-ND - IC REG CTRLR BST FLYBK ISO 8-DFN MCP1630VT-E/MSCT-ND - IC REG CTRLR BST FLYBK ISO 8MSOP MCP1630VT-E/MSTR-ND - IC REG CTRLR BST FLYBK ISO 8MSOP MCP1630V-E/MS-ND - IC REG CTRLR BST FLYBK ISO 8MSOP MCP1630T-E/MS-ND - IC REG CTRLR BST FLYBK ISO 8MSOP MCP1630-E/MS-ND - IC REG CTRLR BST FLYBK ISO 8MSOP |
MCP1630/MCP1630V
AC/DC CHARACTERISTICS (CONTINUED)
Electrical Specifications: Unless otherwise noted, V IN = 3.0V to 5.5V, F OSC = 1 MHz with 10% Duty Cycle, C IN = 0.1 μF,
V IN for typical values = 5.0V, T A = -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Current Sense Input
Maximum Current Sense Signal
V CS_MAX
0.85
0.9
0.95
V
Set by maximum error amplifier
MCP1630
clamp voltage, divided by 3.
Delay From CS to V EXT
T CS_VEXT
—
12
25
ns
MCP1630
Maximum Current Sense Signal
V CS_MAX
2.55
2.7
2.85
V
V IN > 4.25V
MCP1630V
Maximum CS input range limited by
comparator input common mode
range. V CS_MAX = V IN -1.4V
Delay From CS to V EXT
T CS_VEXT
—
17.5
35
ns
MCP1630V
Minimum Duty Cycle
DC MIN
—
—
0
%
V FB = V REF + 0.1V,
V CS = GND
Current Sense Input Bias Current
I CS_B
—
-0.1
—
μA
V IN = 5V
Internal Driver
R DSON P-channel
R DSON N-channel
R DSon_P
R DSon_N
—
—
10
7
30
30
Ω
Ω
V EXT Rise Time
T RISE
—
5.9
18
ns
C L = 100 pF
Typical for V IN = 3V
V EXT Fall Time
T FALL
—
6.2
18
ns
C L = 100 pF
Typical for V IN = 3V
Protection Features
Under Voltage Lockout
UVLO
2.7
—
3.0
V
V IN falling, V EXT low state when in
UVLO
Under Voltage Lockout Hysteresis UVLO HYS
Thermal Shutdown T SHD
50
—
75
150
150
—
mV
°C
Thermal Shutdown Hysteresis
T SHD_HYS
—
18
—
°C
Note 1:
2:
3:
Capable of higher frequency operation depending on minimum and maximum duty cycles needed.
External oscillator input (OSC IN) rise and fall times between 10 ns and 10 μs used for characterization testing. Signal
levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90% of maximum and minimum
values. Not production tested.
The reference input of the internal amplifier is capable of rail-to-rail operation.
TEMPERATURE SPECIFICATIONS
Electrical Specifications: V IN = 3.0V to 5.5V, F OSC = 1 MHz with 10% Duty Cycle, C IN = 0.1 μF. T A = -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Operating Junction Temperature Range
Storage Temperature Range
Maximum Junction Temperature
T A
T A
T J
-40
-65
—
—
—
—
+125
+150
+150
°C
°C
°C
Steady state
Transient
Thermal Package Resistances
Thermal Resistance, 8L-DFN
θ JA
—
50.8
—
°C/W
Typical 4-layer board with two
(2 mm x 3 mm)
interconnecting vias
Thermal Resistance, 8L-MSOP
θ JA
—
208
—
°C/W
Typical 4-layer board
? 2005 Microchip Technology Inc.
DS21896B-page 7
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