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| 型号： | MCP1631VHV-500E/ST |
| 厂商： | Microchip Technology |
| 文件页数： | 5/34页 |
| 文件大小： | 0K |
| 描述： | IC REG CTRLR ISO PWM VM 20-TSSOP |
| 标准包装： | 74 |
| PWM 型： | 电压模式 |
| 输出数： | 1 |
| 频率 - 最大： | 2MHz |
| 占空比： | 10% |
| 电源电压： | 3.5 V ~ 16 V |
| 降压： | 是 |
| 升压： | 无 |
| 回扫： | 无 |
| 反相： | 无 |
| 倍增器： | 无 |
| 除法器： | 无 |
| Cuk： | 无 |
| 隔离： | 是 |
| 工作温度： | -40°C ~ 125°C |
| 封装/外壳： | 20-TSSOP（0.173"，4.40mm 宽） |
| 包装： | 管件 |
| 产品目录页面： | 668 (CN2011-ZH PDF) |
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MCP1631/HV/MCP1631V/VHV
1.0
ELECTRICAL
CHARACTERISTICS
? Notice: Stresses above those listed under "Maximum
Ratings" may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
Absolute Maximum Ratings ?
V IN - GND (MCP1631/V)................................................+6.5V
operational sections of this specification is not intended.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
V IN - GND (MCP1631HV/VHV)....................................+18.0V
All Other I/O ..............................(GND - 0.3V) to (V DD + 0.3V)
LX to GND............................................. -0.3V to (V DD + 0.3V)
V EXT Output Short Circuit Current ........................ Continuous
Storage temperature .....................................-65°C to +150°C
Maximum Junction Temperature ...................-40°C to +150°C
Operating Junction Temperature...................-40°C to +125°C
ESD Protection On All Pins:
HBM ................................................................................. 4 kV
MM ..................................................................................400V
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, V IN = 3.0V to 5.5V, F OSC = 1 MHz with 10% Duty Cycle, C IN = 0.1 μF,
V DD for typical values = 5.0V, T A for typical values = +25°C, T A = -40°C to +125°C for all minimum and maximums.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Input Characteristics
Input Voltage (MCP1631/V)
Input Voltage
(MCP1631HV/VHV)
Undervoltage Lockout
(MCP1631/V)
Undervoltage Lockout Hysteresis
(MCP1631/MCP1631V)
Input Quiescent Current
(MCP1631/V, MCP1631HV,VHV)
Shutdown Current
I_AVDD for MCP1631/V
I_VIN for MCP1631HV/VHV
V DD
V DD
UVLO
UVLO _HYS
I(V IN )
I IN_SHDN
3.0
3.5
2.7
40
—
—
—
—
2.8
64
3.7
2.4
4.4
5.5
16.0
3.0
100
5
12
17
V
V
V
mV
mA
μA
μA
Non-HV Options
V IN Falling, V EXT low when input
below UVLO threshold
UVLO Hysteresis
SHDN = V DD =OSC DIS
SHDN = GND =OSC DIS ,
Note: Amplifier A3 remains
powered during Shutdown.
OSC IN , OSC DIS and SHDN Input Levels
Low Level Input Voltage
High Level Input Voltage
Input Leakage Current
V IL
V IH
I LEAK
—
2.0
—
—
0.005
0.8
—
1
V
V
μA
External Oscillator Range
F OSC
—
—
2
MHz
Maximum operating frequency is
dependent upon circuit topology
and duty cycle.
Minimum Oscillator High Time
Minimum Oscillator Low Time
T OH _MIN.
T OL _MIN.
—
10
—
ns
Oscillator Rise and Fall Time
Oscillator Input Capacitance
T R and T F
C OSC
0.01
—
—
5
10
—
μs
pf
Note 1:
2:
3:
4:
5:
External Oscillator Input (OSC IN ) rise and fall times between 10 ns and 10 μs were determined during device
characterization testing. Signal levels between 0.8V and 2.0V with rise and fall times measured between 10% and 90%
of maximum and minimum values. Not production tested. Additional timing specifications were fully characterized and
specified that are not production tested.
The minimum V IN must meet two conditions: V IN ≥ 3.5V and V IN ≥ (V OUT(MAX) + V DROPOUT(MAX) ).
TCV OUT = (V OUT-HIGH - V OUT-LOW ) *10 6 / (V R * Δ Temperature), V OUT-HIGH = highest voltage measured over the
temperature range. V OUT-LOW = lowest voltage measured over the temperature range.
Load regulation is measured at a constant junction temperature using low duty cycle pulse testing. Changes in output
voltage due to heating effects are determined using thermal regulation specification TCV OUT .
Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its measured
value with an applied input voltage of V OUT(MAX) + V DROPOUT(MAX) or 3.5V, whichever is greater.
? 2008 Microchip Technology Inc.
DS22063B-page 5
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